DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bang, K | ko |
dc.contributor.author | Kim, S | ko |
dc.contributor.author | Kwak, J | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2013-03-08T08:40:33Z | - |
dc.date.available | 2013-03-08T08:40:33Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-05 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.45, pp.L508 - L511 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92635 | - |
dc.description.abstract | Zinc (Zn) nanodots on thermally grown silicon oxide have been fabricated at low temperature using the photo metal-organic chemical vapor deposition (photo-MOCVD) technique. Metal nanodots for memory application by MOCVD method is suggested for the first time. Even at the low temperature of 150 degrees C, Zn nanodots are successfully deposited by this method. By changing the carrier gas (argon) and the chamber pressure, the shape and size of Zn nanodots, which are presented by scanning electron microscopy (SEM), are systematically investigated in a controlled way. In order to apply these Zn nanodots to a Flash-type nonvolatile memory (NVM), the capacitance-voltage (CV) characteristics of Zn nanodots are also shown in this paper. | - |
dc.language | English | - |
dc.publisher | The Institute of Pure and Applied Physics | - |
dc.subject | STORAGE CHARACTERISTICS | - |
dc.subject | NANOCRYSTAL MEMORIES | - |
dc.subject | SILICON NANOCRYSTALS | - |
dc.subject | OXIDE | - |
dc.title | Zinc nanodots formation by low-temperature photo metal-organic chemical vapor deposition method for memory application | - |
dc.type | Article | - |
dc.identifier.wosid | 000238157100017 | - |
dc.identifier.scopusid | 2-s2.0-33745304210 | - |
dc.type.rims | ART | - |
dc.citation.volume | 45 | - |
dc.citation.beginningpage | L508 | - |
dc.citation.endingpage | L511 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | - |
dc.identifier.doi | 10.1143/JJAP.45.L508 | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | Bang, K | - |
dc.contributor.nonIdAuthor | Kim, S | - |
dc.contributor.nonIdAuthor | Kwak, J | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Zn nanodot | - |
dc.subject.keywordAuthor | photo-MOCVD | - |
dc.subject.keywordAuthor | CV measurement | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordPlus | STORAGE CHARACTERISTICS | - |
dc.subject.keywordPlus | NANOCRYSTAL MEMORIES | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | OXIDE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.