DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, HC | ko |
dc.contributor.author | Kang, TW | ko |
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Kang, JG | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-08T03:12:26Z | - |
dc.date.available | 2013-03-08T03:12:26Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-08 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.87, pp.092501 - 092501 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/91957 | - |
dc.description.abstract | The effects of Mn delta-doping on the magnetic properties of (Ga1-xMnx)N thin films grown on GaN buffer layers by molecular-beam epitaxy were studied. The magnetization curve as a function of the magnetic field as 5 K indicated that ferromagnetisms existed in the Mn delta-doped (Ga1-xMnx)N and (Ga1-xMnx)N thin films and that the magnetization in the Mn delta-doped (Ga1-xMnx)N thin film was significantly enhanced. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga1-xMnx)N thin film was estimated to be above room temperature. The increase of the magnetization in the Mn delta-doped (Ga1-xMnx)N thin film in comparison with that in the (Ga1-xMnx)N thin film was attributed to the enhancement of the carrier-mediated ferromagnetism due to increased hole concentrations. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance, indicating that the enhancement of the magnetic properties in (Ga1-xMnx)N thin films originated from Mn delta doping. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Enhancement of the magnetic properties in (Ga1-xMnx)N thin films due to Mn-delta doping | - |
dc.type | Article | - |
dc.identifier.wosid | 000231503700037 | - |
dc.identifier.scopusid | 2-s2.0-24644492536 | - |
dc.type.rims | ART | - |
dc.citation.volume | 87 | - |
dc.citation.beginningpage | 092501 | - |
dc.citation.endingpage | 092501 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2032587 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Jeon, HC | - |
dc.contributor.nonIdAuthor | Kang, TW | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Kang, JG | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | GAMNN FILMS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | FERROMAGNETISM | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | GA1-XMNXAS | - |
dc.subject.keywordPlus | ACCEPTOR | - |
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