Enhancement of the magnetic properties in (Ga1-xMnx)N thin films due to Mn-delta doping

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dc.contributor.authorJeon, HCko
dc.contributor.authorKang, TWko
dc.contributor.authorKim, TWko
dc.contributor.authorKang, JGko
dc.contributor.authorChang, Kee-Jooko
dc.date.accessioned2013-03-08T03:12:26Z-
dc.date.available2013-03-08T03:12:26Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-08-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.87, pp.092501 - 092501-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/91957-
dc.description.abstractThe effects of Mn delta-doping on the magnetic properties of (Ga1-xMnx)N thin films grown on GaN buffer layers by molecular-beam epitaxy were studied. The magnetization curve as a function of the magnetic field as 5 K indicated that ferromagnetisms existed in the Mn delta-doped (Ga1-xMnx)N and (Ga1-xMnx)N thin films and that the magnetization in the Mn delta-doped (Ga1-xMnx)N thin film was significantly enhanced. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga1-xMnx)N thin film was estimated to be above room temperature. The increase of the magnetization in the Mn delta-doped (Ga1-xMnx)N thin film in comparison with that in the (Ga1-xMnx)N thin film was attributed to the enhancement of the carrier-mediated ferromagnetism due to increased hole concentrations. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance, indicating that the enhancement of the magnetic properties in (Ga1-xMnx)N thin films originated from Mn delta doping.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleEnhancement of the magnetic properties in (Ga1-xMnx)N thin films due to Mn-delta doping-
dc.typeArticle-
dc.identifier.wosid000231503700037-
dc.identifier.scopusid2-s2.0-24644492536-
dc.type.rimsART-
dc.citation.volume87-
dc.citation.beginningpage092501-
dc.citation.endingpage092501-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.2032587-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorJeon, HC-
dc.contributor.nonIdAuthorKang, TW-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorKang, JG-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusGAMNN FILMS-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusFERROMAGNETISM-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusGA1-XMNXAS-
dc.subject.keywordPlusACCEPTOR-
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