DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, T. | ko |
dc.contributor.author | Jeong, Yong-Sik | ko |
dc.contributor.author | Yang, Kyoung-Hoon | ko |
dc.date.accessioned | 2013-03-08T02:52:52Z | - |
dc.date.available | 2013-03-08T02:52:52Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-04 | - |
dc.identifier.citation | IET CIRCUITS DEVICES & SYSTEMS, v.2, no.2, pp.281 - 287 | - |
dc.identifier.issn | 1751-858X | - |
dc.identifier.uri | http://hdl.handle.net/10203/91897 | - |
dc.description.abstract | The low-power/high-speed performance of current-mode logic (CML) D flip-flops based on negative-differential-re si stance (NDR) devices is presented. The device count used in the fabricated circuit has been significantly reduced by using the NDR-based D flip-flop topology, leading to enhanced low-power/high-speed performance. The operation of the fabricated NDR-based CML D flip-flop has been confirmed to 36 Gb/s, which is the highest speed among NDR-based differential-mode D flip-flops reported to date. The power consumption of the D flip-flop core circuit was measured to be as low as 20 mW at a power supply voltage of -3.3 V. In addition, a power-delay product of 0.55 pJ has been obtained from the NDR-based CML D flip-flop, which is the lowest value to the authors' knowledge among the previously reported D flip-flops up to operation speeds in the region of 40 Gb/s. | - |
dc.language | English | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.subject | RESONANT-TUNNELING DIODES | - |
dc.subject | TECHNOLOGY | - |
dc.subject | FREQUENCY | - |
dc.subject | OPERATION | - |
dc.subject | ELEMENT | - |
dc.subject | MOBILE | - |
dc.subject | TIME | - |
dc.subject | GHZ | - |
dc.title | Low-power high-speed performance of current-mode logic D flip-flop topology using negative-differential-resistance devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000255251700014 | - |
dc.identifier.scopusid | 2-s2.0-42149195981 | - |
dc.type.rims | ART | - |
dc.citation.volume | 2 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 281 | - |
dc.citation.endingpage | 287 | - |
dc.citation.publicationname | IET CIRCUITS DEVICES & SYSTEMS | - |
dc.identifier.doi | 10.1049/iet-cds:20070135 | - |
dc.contributor.localauthor | Yang, Kyoung-Hoon | - |
dc.contributor.nonIdAuthor | Kim, T. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | RESONANT-TUNNELING DIODES | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | FREQUENCY | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | ELEMENT | - |
dc.subject.keywordPlus | MOBILE | - |
dc.subject.keywordPlus | TIME | - |
dc.subject.keywordPlus | GHZ | - |
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