Mechanically Operated Random Access Memory (MORAM) Based on an Electrostatic Microswitch for Nonvolatile Memory Applications

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dc.contributor.authorJang, Weon-Wiko
dc.contributor.authorLee, Jeong-Oenko
dc.contributor.authorYang, Hyun-Hoko
dc.contributor.authorYoon, Jun-Boko
dc.date.accessioned2013-03-08T01:46:31Z-
dc.date.available2013-03-08T01:46:31Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-10-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.10, pp.2785 - 2789-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/91759-
dc.description.abstractWe proposed and demonstrated a mechanically operated random access memory (MORAM) based on an electrostatically actuated metallic microswitch for nonvolatile memory applications. The metallic microswitch-based MORAM successfully showed program and erase operations, wherein the microswitch had an essentially zero off current, an abrupt switching with less than 1 mV/dec, and an on/off current ratio over 10(7), and its stored charge was investigated with the metal-oxide-semiconductor (MOS) capacitor. Moreover, first reported were an endurance of up to 10(5) cycles in air ambient and a retention time of more than 10(4) s in vacuum ambient.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectSWITCHES-
dc.subjectINTEGRATION-
dc.subjectNANORELAY-
dc.subjectDEVICE-
dc.subjectLIMITS-
dc.titleMechanically Operated Random Access Memory (MORAM) Based on an Electrostatic Microswitch for Nonvolatile Memory Applications-
dc.typeArticle-
dc.identifier.wosid000260252700031-
dc.identifier.scopusid2-s2.0-53649105725-
dc.type.rimsART-
dc.citation.volume55-
dc.citation.issue10-
dc.citation.beginningpage2785-
dc.citation.endingpage2789-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2008.2003052-
dc.contributor.localauthorYoon, Jun-Bo-
dc.contributor.nonIdAuthorJang, Weon-Wi-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorAbrupt switching-
dc.subject.keywordAuthordynamic random access memory (DRAM)-
dc.subject.keywordAuthorelectrostatic microswitch-
dc.subject.keywordAuthorendurance-
dc.subject.keywordAuthormicroelectro-mechanical systems (MEMS)-
dc.subject.keywordAuthornonvolatile memory-
dc.subject.keywordAuthorretention-
dc.subject.keywordPlusSWITCHES-
dc.subject.keywordPlusINTEGRATION-
dc.subject.keywordPlusNANORELAY-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordPlusLIMITS-
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