DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Weon-Wi | ko |
dc.contributor.author | Lee, Jeong-Oen | ko |
dc.contributor.author | Yang, Hyun-Ho | ko |
dc.contributor.author | Yoon, Jun-Bo | ko |
dc.date.accessioned | 2013-03-08T01:46:31Z | - |
dc.date.available | 2013-03-08T01:46:31Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-10 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.10, pp.2785 - 2789 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/91759 | - |
dc.description.abstract | We proposed and demonstrated a mechanically operated random access memory (MORAM) based on an electrostatically actuated metallic microswitch for nonvolatile memory applications. The metallic microswitch-based MORAM successfully showed program and erase operations, wherein the microswitch had an essentially zero off current, an abrupt switching with less than 1 mV/dec, and an on/off current ratio over 10(7), and its stored charge was investigated with the metal-oxide-semiconductor (MOS) capacitor. Moreover, first reported were an endurance of up to 10(5) cycles in air ambient and a retention time of more than 10(4) s in vacuum ambient. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SWITCHES | - |
dc.subject | INTEGRATION | - |
dc.subject | NANORELAY | - |
dc.subject | DEVICE | - |
dc.subject | LIMITS | - |
dc.title | Mechanically Operated Random Access Memory (MORAM) Based on an Electrostatic Microswitch for Nonvolatile Memory Applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000260252700031 | - |
dc.identifier.scopusid | 2-s2.0-53649105725 | - |
dc.type.rims | ART | - |
dc.citation.volume | 55 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 2785 | - |
dc.citation.endingpage | 2789 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2008.2003052 | - |
dc.contributor.localauthor | Yoon, Jun-Bo | - |
dc.contributor.nonIdAuthor | Jang, Weon-Wi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Abrupt switching | - |
dc.subject.keywordAuthor | dynamic random access memory (DRAM) | - |
dc.subject.keywordAuthor | electrostatic microswitch | - |
dc.subject.keywordAuthor | endurance | - |
dc.subject.keywordAuthor | microelectro-mechanical systems (MEMS) | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordAuthor | retention | - |
dc.subject.keywordPlus | SWITCHES | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | NANORELAY | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | LIMITS | - |
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