Highly selective SiO2 etching in low-electron-temperature inductively coupled plasma

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We develop a new oxide etching system having a low-electron-temperature plasma by setting a grid in the middle of the chamber. The electron temperature is less than 1.1 eV at 15 mTorr. We carry out the etching of silicon dioxide in the system to investigate the etching characteristics in a low-electron-temperature plasma. The etching characteristics after setting the grid are very different from those in the absence of a grid. The low dissociation rate due to the low electron temperature can explain such a difference. With the grid method, we can obtain a high etching selectivity of oxide for the photoresist of 74, which is ten times higher than that in the case without the grid.
Publisher
INST PURE APPLIED PHYSICS
Issue Date
2007-06
Language
English
Article Type
Article
Keywords

CYCLOTRON-RESONANCE PLASMA; HIGH-DENSITY PLASMA; SILICON DIOXIDE; FILM DEPOSITION; MOLECULAR GASES; GRID SYSTEM; PARAMETERS; DISCHARGE; ENERGY; PRESSURE

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, v.46, pp.3602 - 3604

ISSN
0021-4922
DOI
10.1143/JJAP.46.3602
URI
http://hdl.handle.net/10203/91639
Appears in Collection
PH-Journal Papers(저널논문)
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