DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, KB | ko |
dc.contributor.author | Park, Chul Soon | ko |
dc.date.accessioned | 2013-03-08T00:45:20Z | - |
dc.date.available | 2013-03-08T00:45:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-11 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, v.54, pp.2227 - 2232 | - |
dc.identifier.issn | 0885-3010 | - |
dc.identifier.uri | http://hdl.handle.net/10203/91632 | - |
dc.description.abstract | In this paper, the potential feasibility of integrating BaxSr1-xTiO3 (BST) films into Si wafer by adopting tunable interdigital capacitor (IDC) with TiO2 thin film buffer layer and a RF tunable active bandpass filter (BPF) using BST based capacitor are proposed. TiO2 as a buffer layer is grown onto Si substrate by atomic layer deposition (ALD) and the interdigital capacitor on BST(500 nm)/TiO2(50 nm)/HR-Si is fabricated. BST interdigital tunable capacitor integrated on HR-Si substrate with high tunability and low loss tangent are characterized for their microwave performances. BST/TiO2/HRSi IDC shows much enhanced tunability values of 40% and commutation quality factor (CQF) of 56.71. A resonator consists of an active capacitance circuit together with a BST varactor. The active capacitor is made of a field effect transistor (FET) that exhibits negative resistance as well as capacitance. The measured second order active BPF shows bandwidth of 110 MHz, insertion loss of about 1 dB at the 1.81 GHz center frequency and tuning frequency of 230 MHz (1.81-2.04 GHz). | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Application of RF varactor using BaxSr1-xTiO3/TiO2/HR-Si substrate for reconfigurable radio | - |
dc.type | Article | - |
dc.identifier.wosid | 000250789400002 | - |
dc.identifier.scopusid | 2-s2.0-37049020665 | - |
dc.type.rims | ART | - |
dc.citation.volume | 54 | - |
dc.citation.beginningpage | 2227 | - |
dc.citation.endingpage | 2232 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | - |
dc.identifier.doi | 10.1109/TUFFC.2007.527 | - |
dc.contributor.localauthor | Park, Chul Soon | - |
dc.contributor.nonIdAuthor | Kim, KB | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | HIGH TUNABILITY | - |
dc.subject.keywordPlus | BUFFER LAYERS | - |
dc.subject.keywordPlus | FILTER | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | TA2O5 | - |
dc.subject.keywordPlus | TIO2 | - |
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