Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides

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Comparative analysis of the carrier dynamics of GaN quantum dot (QD) and GaN quantum well (QW) separated confinement heterostructures (SCHs) with low-Al-content AlGaN waveguide layers is reported. A redshift (blueshift) of QD (wetting layer) emission is found with respect to QW emission, as expected from the thickness hierarchy of these objects. The influence of nonradiative processes on QD emission in QD SCH is dramatically reduced compared to the case of QW SCH. It is concluded that GaN QDs in low-Al-content AlGaN matrix are robust localization centers and that the carrier dynamics is seriously affected by the built-in internal field effect. (c) 2006 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2006-12
Language
English
Article Type
Article
Keywords

OPTICAL-PROPERTIES; LOCALIZATION

Citation

APPLIED PHYSICS LETTERS, v.89, pp.1051 - 1053

ISSN
0003-6951
DOI
10.1063/1.2420776
URI
http://hdl.handle.net/10203/91570
Appears in Collection
PH-Journal Papers(저널논문)
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