DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Kyung Joong | ko |
dc.contributor.author | Kim, Jeong Won | ko |
dc.contributor.author | Yang, Moon-Seung | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.date.accessioned | 2013-03-07T23:22:53Z | - |
dc.date.available | 2013-03-07T23:22:53Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-10 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.74, no.15 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10203/91549 | - |
dc.description.abstract | Oxidation of silicon during the growth of silicon oxide by ion beam sputter deposition was studied by in situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure at various deposition temperatures below 600 degrees C. At low temperatures, the variation of incorporated oxygen content is similar to a dissociative adsorption isotherm of O-2 on Si indicating that the surface-confined reaction of the deposited Si atoms with the adsorbed oxygen atoms is the main process. However, it shows a three-step variation with the oxygen partial pressure at high temperatures. The evolution of SiO species confirmed by the XPS indicates that an adsorption-induced surface reaction and a diffusion-induced internal reaction are the main pathways for the Si oxidation. | - |
dc.language | English | - |
dc.publisher | AMERICAN PHYSICAL SOC | - |
dc.subject | SILICON NANOCRYSTALS | - |
dc.subject | THIN-FILM | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | IDENTIFICATION | - |
dc.subject | SI(111)-(7X7) | - |
dc.subject | LUMINESCENCE | - |
dc.subject | SURFACES | - |
dc.subject | SI(100) | - |
dc.subject | XPS | - |
dc.title | Oxidation of Si during the growth of SiOx by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature | - |
dc.type | Article | - |
dc.identifier.wosid | 000241723600012 | - |
dc.identifier.scopusid | 2-s2.0-33749666003 | - |
dc.type.rims | ART | - |
dc.citation.volume | 74 | - |
dc.citation.issue | 15 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.identifier.doi | 10.1103/PhysRevB.74.153305 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Kim, Kyung Joong | - |
dc.contributor.nonIdAuthor | Kim, Jeong Won | - |
dc.contributor.nonIdAuthor | Yang, Moon-Seung | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | IDENTIFICATION | - |
dc.subject.keywordPlus | SI(111)-(7X7) | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | SI(100) | - |
dc.subject.keywordPlus | XPS | - |
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