Oxidation of Si during the growth of SiOx by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature

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dc.contributor.authorKim, Kyung Joongko
dc.contributor.authorKim, Jeong Wonko
dc.contributor.authorYang, Moon-Seungko
dc.contributor.authorShin, JungHoonko
dc.date.accessioned2013-03-07T23:22:53Z-
dc.date.available2013-03-07T23:22:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-10-
dc.identifier.citationPHYSICAL REVIEW B, v.74, no.15-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10203/91549-
dc.description.abstractOxidation of silicon during the growth of silicon oxide by ion beam sputter deposition was studied by in situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure at various deposition temperatures below 600 degrees C. At low temperatures, the variation of incorporated oxygen content is similar to a dissociative adsorption isotherm of O-2 on Si indicating that the surface-confined reaction of the deposited Si atoms with the adsorbed oxygen atoms is the main process. However, it shows a three-step variation with the oxygen partial pressure at high temperatures. The evolution of SiO species confirmed by the XPS indicates that an adsorption-induced surface reaction and a diffusion-induced internal reaction are the main pathways for the Si oxidation.-
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.subjectSILICON NANOCRYSTALS-
dc.subjectTHIN-FILM-
dc.subjectPHOTOLUMINESCENCE-
dc.subjectIDENTIFICATION-
dc.subjectSI(111)-(7X7)-
dc.subjectLUMINESCENCE-
dc.subjectSURFACES-
dc.subjectSI(100)-
dc.subjectXPS-
dc.titleOxidation of Si during the growth of SiOx by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature-
dc.typeArticle-
dc.identifier.wosid000241723600012-
dc.identifier.scopusid2-s2.0-33749666003-
dc.type.rimsART-
dc.citation.volume74-
dc.citation.issue15-
dc.citation.publicationnamePHYSICAL REVIEW B-
dc.identifier.doi10.1103/PhysRevB.74.153305-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorKim, Kyung Joong-
dc.contributor.nonIdAuthorKim, Jeong Won-
dc.contributor.nonIdAuthorYang, Moon-Seung-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSILICON NANOCRYSTALS-
dc.subject.keywordPlusTHIN-FILM-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusIDENTIFICATION-
dc.subject.keywordPlusSI(111)-(7X7)-
dc.subject.keywordPlusLUMINESCENCE-
dc.subject.keywordPlusSURFACES-
dc.subject.keywordPlusSI(100)-
dc.subject.keywordPlusXPS-
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