DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, JS | ko |
dc.contributor.author | Gokarna, A | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Son, JK | ko |
dc.contributor.author | Lee, SN | ko |
dc.contributor.author | Sakong, T | ko |
dc.contributor.author | Paek, HS | ko |
dc.contributor.author | Nam, OH | ko |
dc.contributor.author | Park, Y | ko |
dc.contributor.author | Park, SH | ko |
dc.date.accessioned | 2013-03-07T23:14:15Z | - |
dc.date.available | 2013-03-07T23:14:15Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-07 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.102, pp.1637 - 1639 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/91527 | - |
dc.description.abstract | Comparative analysis of optical characteristics of In0.08Ga0.92N/In0.03Ga0.97N multiquantum well (MQW) laser diode structures grown on freestanding GaN and on sapphire substrates is reported. Higher quantum efficiency, higher thermal activation energy, smaller Stokes-like shift, and shorter radiative lifetime are observed for InGaN MQWs on GaN substrate than those of the same MQWs on sapphire substrate. From time-resolved optical analysis, we find that not only an increase in nonradiative lifetime due to reduced dislocation density but also a decrease in radiative lifetime caused by suppressed piezoelectric field play an important role in enhancing optical properties of InGaN MQWs on GaN substrates. (c) 2007 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | STRAINED-LAYER SUPERLATTICES | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | DYNAMICS | - |
dc.subject | ENERGY | - |
dc.subject | SHIFT | - |
dc.title | Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000248018300024 | - |
dc.identifier.scopusid | 2-s2.0-34547213822 | - |
dc.type.rims | ART | - |
dc.citation.volume | 102 | - |
dc.citation.beginningpage | 1637 | - |
dc.citation.endingpage | 1639 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.2749281 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Hwang, JS | - |
dc.contributor.nonIdAuthor | Gokarna, A | - |
dc.contributor.nonIdAuthor | Son, JK | - |
dc.contributor.nonIdAuthor | Lee, SN | - |
dc.contributor.nonIdAuthor | Sakong, T | - |
dc.contributor.nonIdAuthor | Paek, HS | - |
dc.contributor.nonIdAuthor | Nam, OH | - |
dc.contributor.nonIdAuthor | Park, Y | - |
dc.contributor.nonIdAuthor | Park, SH | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | STRAINED-LAYER SUPERLATTICES | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | DYNAMICS | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | SHIFT | - |
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