DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Choo, DC | ko |
dc.contributor.author | Yoo, KH | ko |
dc.contributor.author | Jung, MH | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Lee, JH | ko |
dc.date.accessioned | 2013-03-07T22:37:30Z | - |
dc.date.available | 2013-03-07T22:37:30Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-05 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.97, pp.1052 - 1057 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/91515 | - |
dc.description.abstract | The variations in the electronic properties of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures due to an AlN embedded spacer layer were investigated by using Shubnikov-de Haas (SdH) measurements. The carrier densities of the 2DEGs in the Al0.4Ga0.6N/AlN/GaN and the Al0.4Ga0.6N/GaN heterostructures, determined from the SdH data, were 8.75 X 10(12) and 8.66 X 10(12) cm(-2), respectively. The electron carrier density and the mobility of the 2DEG in the AlxGa1-xN/GaN heterostructure with an AlN spacer layer were larger than those in the AlxGa1-xN/GaN heterostructure. The electronic subband energies, the wave functions, and the Fermi energies in the Al0.4Ga0.6N/AlN/GaN and Al0.4Ga0.6N/GaN heterostructures were calculated by using a self-consistent method taking into account spontaneous and piezoelectric polarizations. These present results indicate that the electronic parameters of the 2DEG occupying an AlxGa1-xN/GaN heterostructure are significantly affected by an AlN spacer layer, and they can help to improve the understanding of the applications of AlxGa1-xN/GaN hetero structures with AlN spacer layers in high-speed and high-power electronic devices. (c) 2005 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | SHUBNIKOV-DEHAAS MEASUREMENTS | - |
dc.subject | ALGAN/GAN HETEROSTRUCTURES | - |
dc.subject | CHARGE | - |
dc.title | Carrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in AlxGa1-xN/GaN heterostructures | - |
dc.type | Article | - |
dc.identifier.wosid | 000230168100083 | - |
dc.identifier.scopusid | 2-s2.0-20944451899 | - |
dc.type.rims | ART | - |
dc.citation.volume | 97 | - |
dc.citation.beginningpage | 1052 | - |
dc.citation.endingpage | 1057 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.1904152 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Choo, DC | - |
dc.contributor.nonIdAuthor | Yoo, KH | - |
dc.contributor.nonIdAuthor | Jung, MH | - |
dc.contributor.nonIdAuthor | Lee, JH | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SHUBNIKOV-DEHAAS MEASUREMENTS | - |
dc.subject.keywordPlus | ALGAN/GAN HETEROSTRUCTURES | - |
dc.subject.keywordPlus | CHARGE | - |
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