Carrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in AlxGa1-xN/GaN heterostructures

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dc.contributor.authorKim, TWko
dc.contributor.authorChoo, DCko
dc.contributor.authorYoo, KHko
dc.contributor.authorJung, MHko
dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorLee, JHko
dc.date.accessioned2013-03-07T22:37:30Z-
dc.date.available2013-03-07T22:37:30Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-05-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.97, pp.1052 - 1057-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/91515-
dc.description.abstractThe variations in the electronic properties of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures due to an AlN embedded spacer layer were investigated by using Shubnikov-de Haas (SdH) measurements. The carrier densities of the 2DEGs in the Al0.4Ga0.6N/AlN/GaN and the Al0.4Ga0.6N/GaN heterostructures, determined from the SdH data, were 8.75 X 10(12) and 8.66 X 10(12) cm(-2), respectively. The electron carrier density and the mobility of the 2DEG in the AlxGa1-xN/GaN heterostructure with an AlN spacer layer were larger than those in the AlxGa1-xN/GaN heterostructure. The electronic subband energies, the wave functions, and the Fermi energies in the Al0.4Ga0.6N/AlN/GaN and Al0.4Ga0.6N/GaN heterostructures were calculated by using a self-consistent method taking into account spontaneous and piezoelectric polarizations. These present results indicate that the electronic parameters of the 2DEG occupying an AlxGa1-xN/GaN heterostructure are significantly affected by an AlN spacer layer, and they can help to improve the understanding of the applications of AlxGa1-xN/GaN hetero structures with AlN spacer layers in high-speed and high-power electronic devices. (c) 2005 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectSHUBNIKOV-DEHAAS MEASUREMENTS-
dc.subjectALGAN/GAN HETEROSTRUCTURES-
dc.subjectCHARGE-
dc.titleCarrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in AlxGa1-xN/GaN heterostructures-
dc.typeArticle-
dc.identifier.wosid000230168100083-
dc.identifier.scopusid2-s2.0-20944451899-
dc.type.rimsART-
dc.citation.volume97-
dc.citation.beginningpage1052-
dc.citation.endingpage1057-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.1904152-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorChoo, DC-
dc.contributor.nonIdAuthorYoo, KH-
dc.contributor.nonIdAuthorJung, MH-
dc.contributor.nonIdAuthorLee, JH-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusSHUBNIKOV-DEHAAS MEASUREMENTS-
dc.subject.keywordPlusALGAN/GAN HETEROSTRUCTURES-
dc.subject.keywordPlusCHARGE-
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