Tuning depth profiles of organosilicate films with ultraviolet curing

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dc.contributor.authorKim, Taek-Sooko
dc.contributor.authorTsuji, Naotoko
dc.contributor.authorMatsushita, Kiyohiroko
dc.contributor.authorKobayashi, Nobuyoshiko
dc.contributor.authorChumakov, Dmytroko
dc.contributor.authorGeisler, Holmko
dc.contributor.authorZschech, Ehrenfriedko
dc.contributor.authorDauskardt, Reinhold H.ko
dc.date.accessioned2013-03-07T19:42:31Z-
dc.date.available2013-03-07T19:42:31Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-10-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.104, no.7-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/91120-
dc.description.abstractThis study demonstrates that ultraviolet (UV) radiation curing can control depth profiles of organosilicate films. Striking differences between the effects of monochromatic and broadband UV irradiation were observed. For the same as-deposited organosilicate film and cure duration, monochromatic radiation has a greater impact on film structure, elastic modulus, and fracture resistance, but also results in a greater degree of depth dependent properties. Oscillating elastic modulus through the film thickness was observed with force modulation atomic force microscopy. We present a new standing wave model that accurately predicts the resulting depth dependent stiffness variations considering changes in film shrinkage and refractive index in terms of curing time, and can further be used to account for initial film thickness dependence of UV curing and film absorption. Promising applications of the depth dependent UV curing to produce multifunctional ultralow-k layers with a single postdeposition curing process are discussed. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.2999637]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectADHESION-
dc.subjectFRACTURE-
dc.titleTuning depth profiles of organosilicate films with ultraviolet curing-
dc.typeArticle-
dc.identifier.wosid000260125500113-
dc.identifier.scopusid2-s2.0-54049084560-
dc.type.rimsART-
dc.citation.volume104-
dc.citation.issue7-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.2999637-
dc.contributor.localauthorKim, Taek-Soo-
dc.contributor.nonIdAuthorTsuji, Naoto-
dc.contributor.nonIdAuthorMatsushita, Kiyohiro-
dc.contributor.nonIdAuthorKobayashi, Nobuyoshi-
dc.contributor.nonIdAuthorChumakov, Dmytro-
dc.contributor.nonIdAuthorGeisler, Holm-
dc.contributor.nonIdAuthorZschech, Ehrenfried-
dc.contributor.nonIdAuthorDauskardt, Reinhold H.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusADHESION-
dc.subject.keywordPlusFRACTURE-
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