New base-soluble positive-working photosensitive polyimides having o-nitrobenzyl ester group

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dc.contributor.authorChoi, KHko
dc.contributor.authorJung, JCko
dc.contributor.authorKim, KSko
dc.contributor.authorKim, Jin-Baekko
dc.date.accessioned2013-03-07T19:11:25Z-
dc.date.available2013-03-07T19:11:25Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-05-
dc.identifier.citationPOLYMERS FOR ADVANCED TECHNOLOGIES, v.16, no.5, pp.387 - 392-
dc.identifier.issn1042-7147-
dc.identifier.urihttp://hdl.handle.net/10203/91028-
dc.description.abstractA new positive-working polyimide having photosensitive o-nitrobenzyl ester group as side substituent, poly(1,4-phenyleneoxy-1,4-phenylene-3,6-di[4-(o-nitrobenzyloxy)carbonylphenyl]pyromellit imide] (ODA-PI-Nb), was prepared and its aqueous alkali-developability and photosensitivity were investigated. ODA-PI-Nb was synthesized by the esterification reaction of poly[1,4-phenyleneoxy-1.4-phenylene-3,6-di(4-carboxylphenyl)pyromellit imide] (ODA-PI) with o-nitrobenzyl bromide in the presence of triethylamine (Et3N). ODA-PI-Nb obtained was characterized by FT-IR and H-1-NMR spectroscopy. The degree of esterification reaction was found from H-1-NMR absorption of CH2 proton to be over 95mol%. Upon photo-irradiation ODA-PI-Nb transformed to the freely aqueous alkali-soluble ODA-PI under formation of o-nitrosobenzaldehyde. The thickness loss of thin ODA-PI-Nb films upon post-baking at 400 degrees C was in the 10-15% range. ODA-PI-Nb showed positive-tone behavior in characteristic sensitivity curve and positive patterns were obtained using a typical lithographic process using aqueous tetramethylammonium hydroxide developer. The patterns with excellent resolution were observed and evaluated by optical microscopy and scanning electron microscopy. Copyright (c) 2005 John Wiley & Sons, Ltd.-
dc.languageEnglish-
dc.publisherJOHN WILEY & SONS LTD-
dc.titleNew base-soluble positive-working photosensitive polyimides having o-nitrobenzyl ester group-
dc.typeArticle-
dc.identifier.wosid000229253600005-
dc.identifier.scopusid2-s2.0-18944387370-
dc.type.rimsART-
dc.citation.volume16-
dc.citation.issue5-
dc.citation.beginningpage387-
dc.citation.endingpage392-
dc.citation.publicationnamePOLYMERS FOR ADVANCED TECHNOLOGIES-
dc.identifier.doi10.1002/pat.601-
dc.contributor.localauthorKim, Jin-Baek-
dc.contributor.nonIdAuthorChoi, KH-
dc.contributor.nonIdAuthorJung, JC-
dc.contributor.nonIdAuthorKim, KS-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorpolyimides-
dc.subject.keywordAuthorphotosensitive-
dc.subject.keywordAuthoralkali-developable-
dc.subject.keywordAuthoresterification-
dc.subject.keywordAuthorFT-IR-
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