DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chae, KS | ko |
dc.contributor.author | Kim, DW | ko |
dc.contributor.author | Kim, Bongsoo | ko |
dc.contributor.author | Som, SJ | ko |
dc.contributor.author | Lee, IH | ko |
dc.contributor.author | Lee, CR | ko |
dc.date.accessioned | 2013-03-07T18:10:56Z | - |
dc.date.available | 2013-03-07T18:10:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-04 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.276, no.3-4, pp.367 - 373 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/90875 | - |
dc.description.abstract | In this work, we reported the growth, fabrication and characterization of an AlxGa1-xN heteroepitaxial back-illuminated visible-blind UV photodetector designed for flip-chip mounting. This device was grown on one side of a polished sapphire substrate using a low-temperature A1N buffer layer created by six-pocket multi-wafer system metalorganic chemical vapor deposition (MOCVD) with a vertical reactor. In order to obtain the wavelength of the visible-blind region, the AlxGa1-xN layer was grown under various conditions of growth time and gas flow rate, after optimizing the AIN buffer layer. This device consisted of a 1.3 mu m thick Al0.15Ga0.85N "window layer", a 0.16 pm thick Al0.08Ga0.92N i-layer, a 0.46 mu m thick Al0.08Ga0.92N p-layer, a 0.1 mu m thick GaN p-layer, followed by a 30 nm GaN:Mg p(+)-contact layer. All of the device processing was completed using standard semiconductor processing techniques that included photolithography, metallization and etching. In this device, the zero-bias peak responsivity was found around 0.052 A/W at 340 nm, corresponding to an external quantum efficiency of 19%. The rise and fall time of the photoresponse was 20.8 ns. Moreover, this device exhibits a low dark current density of 17 pA/cm(2) at zero-bias. (c) 2004 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | ULTRAVIOLET PHOTODETECTORS | - |
dc.subject | DETECTORS | - |
dc.subject | GAN | - |
dc.subject | PERFORMANCE | - |
dc.subject | DETECTIVITY | - |
dc.title | Characteristics of back-illuminated visible-blind UV photodetector based on AlxGa1-xN p-i-n photodiodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000228385300005 | - |
dc.identifier.scopusid | 2-s2.0-15344343863 | - |
dc.type.rims | ART | - |
dc.citation.volume | 276 | - |
dc.citation.issue | 3-4 | - |
dc.citation.beginningpage | 367 | - |
dc.citation.endingpage | 373 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2004.11.405 | - |
dc.contributor.localauthor | Kim, Bongsoo | - |
dc.contributor.nonIdAuthor | Chae, KS | - |
dc.contributor.nonIdAuthor | Kim, DW | - |
dc.contributor.nonIdAuthor | Som, SJ | - |
dc.contributor.nonIdAuthor | Lee, IH | - |
dc.contributor.nonIdAuthor | Lee, CR | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | heat resolution X-ray diffraction | - |
dc.subject.keywordAuthor | growth from high temperature solutions | - |
dc.subject.keywordAuthor | metalorganic chemical vapor deposition | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | semiconducting III-V materials | - |
dc.subject.keywordAuthor | hetero-junction semiconductor devices | - |
dc.subject.keywordPlus | ULTRAVIOLET PHOTODETECTORS | - |
dc.subject.keywordPlus | DETECTORS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DETECTIVITY | - |
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