First-principles approach to the electron transport and applications for devices based on carbon nanotubes and ultrathin oxides

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We use a first-principles computational scheme to study the transport properties of devices based on telescoping carbon nanotubes. The transmission function is calculated through the matrix Green's function method using a Gaussian basis set. Varying the overlap region of the two nanotubes, we compare the effect of interwall interactions on the transport characteristics with that obtained from a simple tight-binding model. The leakage current through ultrathin gate oxides is also studied for various Si/SiO2 interface models, which are manipulated by varying oxide thickness and crystal phase. (C) 2007 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2007-07
Language
English
Article Type
Proceedings Paper
Citation

COMPUTER PHYSICS COMMUNICATIONS, v.177, pp.30 - 33

ISSN
0010-4655
URI
http://hdl.handle.net/10203/90647
Appears in Collection
EEW-Journal Papers(저널논문)PH-Journal Papers(저널논문)
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