High trap density and long retention time from self-assembled amorphous Si nanocluster floating gate nonvolatile memory

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The memory performance of floating gate nonvolatile memory based on amorphous Si (a-Si) nanoclusters self-assembled during low-temperature oxidation is investigated. A 2 nm thick a-Si layer was grown on a top of a 5.6 nm thick thermal oxide tunneling layer by ultrahigh vacuum ion beam sputter deposition and subsequently oxidized by annealing in flowing N-2/O-2 (9:1) environment for 0-540 s at 900 degrees C. After oxidation, a 14 nm thick Al2O3 control oxide layer was grown by atomic layer deposition. The authors find that the a-Si layer breaks up upon oxidation, self-assembling into a dense array of < 3 nm sized a-Si nanoclusters separated by thermal oxide after 180 s. This combination of discrete Si nanoclusters separated by thermal oxide and modest thermal budget enabled by the use of amorphous cluster enables achieving a trap density in the excess of 10(13) cm(-2) and a retention time of > 1000 s at at 150 degrees C. (c) 2006 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2006-12
Language
English
Article Type
Article
Keywords

NANOCRYSTALS; SILICON; IMPLANTATION; IMPACT

Citation

APPLIED PHYSICS LETTERS, v.89, no.24, pp.443 - 448

ISSN
0003-6951
DOI
10.1063/1.2404586
URI
http://hdl.handle.net/10203/90149
Appears in Collection
NT-Journal Papers(저널논문)
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