Magnetic properties of single-crystalline CoSi nanowires

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dc.contributor.authorSeo, Kwanyongko
dc.contributor.authorVaradwaj, K. S. K.ko
dc.contributor.authorMohanty, Paritoshko
dc.contributor.authorLee, Sunghunko
dc.contributor.authorJo, Younghunko
dc.contributor.authorKim, Jinheeko
dc.contributor.authorKim, Bongsooko
dc.date.accessioned2013-03-07T12:08:03Z-
dc.date.available2013-03-07T12:08:03Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-05-
dc.identifier.citationNANO LETTERS, v.7, no.5, pp.1240 - 1245-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/90137-
dc.description.abstractWe have observed unusual ferromagnetic properties in single-crystalline CoSi nanowire ensemble, in marked contrast to the diamagnetic CoSi in bulk. High-density freestanding CoSi nanowires with B20 crystal structure are synthesized by a vapor-transport-based method. The reaction of cobalt chloride precursor with a Si substrate produces high-aspect-ratio CoSi nanowires. The high-resolution transmission electron microscopy and electron diffraction studies reveal superlattice structure in CoSi nanowires with twice the lattice parameter of simple cubic CoSi lattice. The zero-field-cooled and field-cooled (ZFC-FC) measurements from the nanowire ensemble show freezing of the disordered surface spins at low temperatures. The magnetoresistance (MR) measurements of single nanowire devices show a negative MR whose magnitude gets larger at lower temperatures.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectSI(001)-
dc.subjectFERROMAGNETS-
dc.subjectTECHNOLOGY-
dc.subjectSILICIDES-
dc.subjectFUTURE-
dc.subjectGROWTH-
dc.subjectMETAL-
dc.titleMagnetic properties of single-crystalline CoSi nanowires-
dc.typeArticle-
dc.identifier.wosid000246313000023-
dc.identifier.scopusid2-s2.0-34249690768-
dc.type.rimsART-
dc.citation.volume7-
dc.citation.issue5-
dc.citation.beginningpage1240-
dc.citation.endingpage1245-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/nl070113h-
dc.contributor.localauthorKim, Bongsoo-
dc.contributor.nonIdAuthorSeo, Kwanyong-
dc.contributor.nonIdAuthorVaradwaj, K. S. K.-
dc.contributor.nonIdAuthorMohanty, Paritosh-
dc.contributor.nonIdAuthorLee, Sunghun-
dc.contributor.nonIdAuthorJo, Younghun-
dc.contributor.nonIdAuthorKim, Jinhee-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusSI(001)-
dc.subject.keywordPlusFERROMAGNETS-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusSILICIDES-
dc.subject.keywordPlusFUTURE-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusMETAL-
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