DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yeo, CC | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Gao, E | ko |
dc.contributor.author | Lee, SJ | ko |
dc.contributor.author | Lee, AH | ko |
dc.contributor.author | Yu, CY | ko |
dc.contributor.author | Liu, CW | ko |
dc.contributor.author | Tang, LJ | ko |
dc.contributor.author | Lee, TW | ko |
dc.date.accessioned | 2013-03-07T11:44:20Z | - |
dc.date.available | 2013-03-07T11:44:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-10 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.26, no.10, pp.761 - 763 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/90100 | - |
dc.description.abstract | We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MOSFETS | - |
dc.subject | GATE | - |
dc.subject | THICKNESS | - |
dc.title | Electron mobility enhancement using ultrathin pure Ge on Si substrate | - |
dc.type | Article | - |
dc.identifier.wosid | 000232208700021 | - |
dc.identifier.scopusid | 2-s2.0-27144452065 | - |
dc.type.rims | ART | - |
dc.citation.volume | 26 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 761 | - |
dc.citation.endingpage | 763 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2005.855420 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Yeo, CC | - |
dc.contributor.nonIdAuthor | Gao, E | - |
dc.contributor.nonIdAuthor | Lee, SJ | - |
dc.contributor.nonIdAuthor | Lee, AH | - |
dc.contributor.nonIdAuthor | Yu, CY | - |
dc.contributor.nonIdAuthor | Liu, CW | - |
dc.contributor.nonIdAuthor | Tang, LJ | - |
dc.contributor.nonIdAuthor | Lee, TW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | effective electron mobility | - |
dc.subject.keywordAuthor | Ge | - |
dc.subject.keywordAuthor | high-K gate dielectric | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | THICKNESS | - |
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