Lamellar twinning in semiconductor nanowires

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Multiple lamellar {111} twins are observed in GaAs, GaP, and InAs nanowires synthesized by supercritical fluid-liquid-solid (SFLS) and solution-liquid-solid (SLS) approaches. All of these nanowires have zinc blende (cubic) crystal structure and grow predominantly in the < 111 > direction. The twins bisect the nanowires perpendicular to their growth direction to give them a "bamboo"-like appearance in TEM images. In contrast, Si and Ge nanowires with < 111 > growth direction do not exhibit {111} twins, even though this is a common twin plane with relatively low twin energy in diamond cubic Ge and Si. However, Si and Ge nanowires with < 112 > growth directions typically have several {111} twins extending down the length of the nanowires. Here, we present a semi quantitative model that explains the observed twinning in III-V and IV nanowires.
Publisher
AMER CHEMICAL SOC
Issue Date
2007-02
Language
English
Article Type
Article
Keywords

TRANSMISSION ELECTRON-MICROSCOPY; LIQUID-SOLID SYNTHESIS; INP SINGLE-CRYSTALS; GOLD NANOCRYSTALS; SILICON NANOWIRES; GROWTH; SI; CZOCHRALSKI; MECHANISM; KINETICS

Citation

JOURNAL OF PHYSICAL CHEMISTRY C, v.111, no.7, pp.2929 - 2935

ISSN
1932-7447
DOI
10.1021/jp0672205
URI
http://hdl.handle.net/10203/90092
Appears in Collection
CBE-Journal Papers(저널논문)
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