Study on the synthesis of high quality single crystalline Si1-xGex nanowire and its transport properties

Abstract

In this wok, the authors report a synthesis of high quality single crystalline homogeneous Si1-xGex nanowires and investigate the effects of growth temperature on the microstructures, morphologies, and properties of Si1-xGex nanowires. Fabricated phosphorus-doped Si1-xGex nanowire metal-oxide-semiconductor (MOS) field effect transistor integrated with 5 nm HfO2, TaN/Ta metal gate, and Pd source/drain electrode demonstrated enhancement mode p-MOS operation with I-on/I-off similar to 10(4), subthreshold swing of similar to 136 mV/decade, and small hysteresis of 90 mV. (C) 2007 American Institute of Physics.