Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells

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The InP/InGaAsP double heterejunction (DH) solar cell to increase the short-circuit current is investigated. The InP/InGaAsP DH solar cell has been newly designed having a 1.12 eV InGaAsP absorption layer. Increases of 100% in short-circuit current and 50.18% in efficiency for the DH device are observed over the control sample.
Publisher
INST ENGINEERING TECHNOLOGY-IET
Issue Date
2005-04
Language
English
Article Type
Article
Citation

ELECTRONICS LETTERS, v.41, no.9, pp.557 - 559

ISSN
0013-5194
DOI
10.1049/el:20050005
URI
http://hdl.handle.net/10203/90008
Appears in Collection
EE-Journal Papers(저널논문)
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