Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique

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The ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals is investigated using the variable stripe length geometry with 200 femtosecond pump pulses. We find that the luminescence lifetimes are in the nanosecond range throughout the entire spectral range. However, no evidence for optical gain is observed even when the pump fluence is in excess of 40 mJ/cm(2). A comparison with similarly prepared, oxide-passivated silicon nanocrystals suggests that oxide passivation plays an important role in providing optical gain from silicon nanocrystals. (C) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-10
Language
English
Article Type
Article
Keywords

OPTICAL GAIN; STIMULATED-EMISSION; POROUS SILICON; OXYGEN; LASER

Citation

APPLIED PHYSICS LETTERS, v.91, pp.47 - 55

ISSN
0003-6951
DOI
10.1063/1.2803071
URI
http://hdl.handle.net/10203/89950
Appears in Collection
NT-Journal Papers(저널논문)
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