Si nanocluster sensitization of Er-doped silica for optical amplet using top-pumping visible LEDs

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dc.contributor.authorShin, JungHoonko
dc.contributor.authorLee, Jinkuko
dc.contributor.authorHan, Hak-seungko
dc.contributor.authorJhe, Ji-Hongko
dc.contributor.authorChang, Jee Sooko
dc.contributor.authorSeo, Se-Youngko
dc.contributor.authorLee, Hansuekko
dc.contributor.authorPark, Namkyooko
dc.date.accessioned2013-03-07T08:59:12Z-
dc.date.available2013-03-07T08:59:12Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-07-
dc.identifier.citationIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.12, pp.783 - 796-
dc.identifier.issn1077-260X-
dc.identifier.urihttp://hdl.handle.net/10203/89833-
dc.description.abstractA review is presented of Si nanocluster sensitization of Er-doped silica for planar optical amplifiers using top-pumping 470-mn light-emitting diodes (LEDs). The motivation and basic physical principles underlying the nanocluster sensitization are first reviewed. The material structures necessary for optimum performances are presented, with emphasis on the need for nanoscale engineering of the composition and structure. Evidence of optical gain using commercial GaN-visible LEDs are presented, and the simulation results of possible device performances described. Finally, some possible future directions for research are discussed.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectWAVE-GUIDE AMPLIFIER-
dc.subjectRARE-EARTH IONS-
dc.subjectMU-M-
dc.subjectENERGY-TRANSFER-
dc.subjectEXCITATION SPECTROSCOPY-
dc.subjectSI/SIO2 SUPERLATTICES-
dc.subjectCRYSTALLINE SILICON-
dc.subjectPOROUS SILICON-
dc.subjectLIGHT EMISSION-
dc.titleSi nanocluster sensitization of Er-doped silica for optical amplet using top-pumping visible LEDs-
dc.typeArticle-
dc.identifier.wosid000239745000037-
dc.identifier.scopusid2-s2.0-33747298593-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.beginningpage783-
dc.citation.endingpage796-
dc.citation.publicationnameIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS-
dc.identifier.doi10.1109/JSTQE.2006.876160-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.localauthorLee, Hansuek-
dc.contributor.nonIdAuthorLee, Jinku-
dc.contributor.nonIdAuthorHan, Hak-seung-
dc.contributor.nonIdAuthorJhe, Ji-Hong-
dc.contributor.nonIdAuthorChang, Jee Soo-
dc.contributor.nonIdAuthorSeo, Se-Young-
dc.contributor.nonIdAuthorPark, Namkyoo-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorerbium-
dc.subject.keywordAuthormicrophotonics-
dc.subject.keywordAuthoroptical amplifier-
dc.subject.keywordAuthorsilicon nanocrystal-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusWAVE-GUIDE AMPLIFIER-
dc.subject.keywordPlusRARE-EARTH IONS-
dc.subject.keywordPlusMU-M-
dc.subject.keywordPlusENERGY-TRANSFER-
dc.subject.keywordPlusEXCITATION SPECTROSCOPY-
dc.subject.keywordPlusSI/SIO2 SUPERLATTICES-
dc.subject.keywordPlusCRYSTALLINE SILICON-
dc.subject.keywordPlusPOROUS SILICON-
dc.subject.keywordPlusLIGHT EMISSION-
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