Retardation of boron diffusion in SiGe alloy

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dc.contributor.authorBang, Junhyeokko
dc.contributor.authorKim, Hanchulko
dc.contributor.authorKang, Joongooko
dc.contributor.authorLee, Woo-Jinko
dc.contributor.authorChang, Kee-Jooko
dc.date.accessioned2013-03-07T04:40:02Z-
dc.date.available2013-03-07T04:40:02Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-12-
dc.identifier.citationPHYSICA B-CONDENSED MATTER, v.401, pp.196 - 199-
dc.identifier.issn0921-4526-
dc.identifier.urihttp://hdl.handle.net/10203/89414-
dc.description.abstractWe investigate the effect of Ge on the retardation of B diffusion in SiGe alloys through first-principle calculations, and find that the Ge bonding effect is most significant in the nearest-neighborhood of B. The B dopant diffuses from a self-interstitial-B pair via an interstitialcy mechanism for neutral charge state, while a kick-out mechanism is also possible for 1 + charge state. The migration and activation energies depend on the number and positions of the Ge atoms and are generally enhanced by the presence of Ge, reducing the B diffusivity. (C) 2007 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectTRANSIENT ENHANCED DIFFUSION-
dc.subjectSILICON-
dc.subjectSI1-XGEX-
dc.titleRetardation of boron diffusion in SiGe alloy-
dc.typeArticle-
dc.identifier.wosid000252041000046-
dc.identifier.scopusid2-s2.0-36049006196-
dc.type.rimsART-
dc.citation.volume401-
dc.citation.beginningpage196-
dc.citation.endingpage199-
dc.citation.publicationnamePHYSICA B-CONDENSED MATTER-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorBang, Junhyeok-
dc.contributor.nonIdAuthorKim, Hanchul-
dc.contributor.nonIdAuthorKang, Joongoo-
dc.contributor.nonIdAuthorLee, Woo-Jin-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthordopants-
dc.subject.keywordAuthorboron diffusion-
dc.subject.keywordAuthorSiGe alloy-
dc.subject.keywordAuthorfirst-principle calculations-
dc.subject.keywordPlusTRANSIENT ENHANCED DIFFUSION-
dc.subject.keywordPlusAB-INITIO-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusSI1-XGEX-
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