DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, KW | ko |
dc.contributor.author | Choi, JH | ko |
dc.contributor.author | Yu, HS | ko |
dc.contributor.author | Kweon, SY | ko |
dc.contributor.author | Yeom, SJ | ko |
dc.contributor.author | Kim, NK | ko |
dc.contributor.author | Choi, ES | ko |
dc.contributor.author | Sun, HJ | ko |
dc.contributor.author | Hong, SK | ko |
dc.contributor.author | Hong, TW | ko |
dc.contributor.author | Kim, IH | ko |
dc.contributor.author | Lee, JI | ko |
dc.contributor.author | Ur, SC | ko |
dc.contributor.author | Lee, YG | ko |
dc.contributor.author | Ryu, SL | ko |
dc.contributor.author | Choi, Si-Kyung | ko |
dc.date.accessioned | 2013-03-07T02:30:32Z | - |
dc.date.available | 2013-03-07T02:30:32Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | INTEGRATED FERROELECTRICS, v.81, pp.113 - 122 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | http://hdl.handle.net/10203/89212 | - |
dc.description.abstract | Metallization properties of TiN/Al/Ti (metal-1) layers deposited by sputtering method were evaluated in a new 16 Mb FeRAM device. The two main features of the device were double W bit-line and Pt/(Bi,La)(4)Ti3O12/Pt ferroelectric capacitor. The metal-1 films were deposited on both the Pt top electrode and the W bit-line after fabricating the contact holes. The contact filling behaviors of the metal-1 layers were mainly depended on the pre-annealing condition performed before depositing the metal-1 layers. The optimized pre-annealing conditions was 400 degrees C/N-2/30 min on W bit-line. From the result, a 16 Mb FeRAM device was successfully developed. | - |
dc.language | English | - |
dc.publisher | TAYLOR FRANCIS LTD | - |
dc.subject | BLT THIN-FILMS | - |
dc.subject | FERROELECTRIC PROPERTIES | - |
dc.subject | CAPACITOR STRUCTURE | - |
dc.subject | (BI,LA)(4)TI3O12 | - |
dc.subject | INTEGRATION | - |
dc.title | Pre-annealing effects on al metallization properties in high density FeRAM device | - |
dc.type | Article | - |
dc.identifier.wosid | 000238680800013 | - |
dc.identifier.scopusid | 2-s2.0-33745855893 | - |
dc.type.rims | ART | - |
dc.citation.volume | 81 | - |
dc.citation.beginningpage | 113 | - |
dc.citation.endingpage | 122 | - |
dc.citation.publicationname | INTEGRATED FERROELECTRICS | - |
dc.contributor.localauthor | Choi, Si-Kyung | - |
dc.contributor.nonIdAuthor | Cho, KW | - |
dc.contributor.nonIdAuthor | Choi, JH | - |
dc.contributor.nonIdAuthor | Yu, HS | - |
dc.contributor.nonIdAuthor | Kweon, SY | - |
dc.contributor.nonIdAuthor | Yeom, SJ | - |
dc.contributor.nonIdAuthor | Kim, NK | - |
dc.contributor.nonIdAuthor | Choi, ES | - |
dc.contributor.nonIdAuthor | Sun, HJ | - |
dc.contributor.nonIdAuthor | Hong, SK | - |
dc.contributor.nonIdAuthor | Hong, TW | - |
dc.contributor.nonIdAuthor | Kim, IH | - |
dc.contributor.nonIdAuthor | Lee, JI | - |
dc.contributor.nonIdAuthor | Ur, SC | - |
dc.contributor.nonIdAuthor | Lee, YG | - |
dc.contributor.nonIdAuthor | Ryu, SL | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | high density FeRAM | - |
dc.subject.keywordAuthor | sputtering method | - |
dc.subject.keywordAuthor | Al metallization process | - |
dc.subject.keywordAuthor | pre-annealing | - |
dc.subject.keywordAuthor | tungsten oxidation | - |
dc.subject.keywordPlus | BLT THIN-FILMS | - |
dc.subject.keywordPlus | FERROELECTRIC PROPERTIES | - |
dc.subject.keywordPlus | CAPACITOR STRUCTURE | - |
dc.subject.keywordPlus | (BI,LA)(4)TI3O12 | - |
dc.subject.keywordPlus | INTEGRATION | - |
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