Use of a MOSFET for radiation monitoring in space and comparison with the NASA trapped particle model

Abstract

We apply the model for radiation effects on MOSFETs with concurrent thermal annealing to the case of space radiation. The results of total dose experiments on board KITSAT-1 are analyzed using the model. We find that the difference in responses of the two RADFETs, specialty designed MOSFETs with thick gate oxides, comes from the built-in shielding effects due to the satellite structures. The oscillatory behavior seen in the threshold voltage shifts is identified to be the effect of a temperature variation. The estimated total dose is compared with that of the NASA trapped particle model.