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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Journal Papers(저널논문)

Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique

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dc.contributor.authorMyong, SYko
dc.contributor.authorShevaleevskiy, Oko
dc.contributor.authorLim, Koeng Suko
dc.contributor.authorMiyajima, Sko
dc.contributor.authorKonagai, Mko
dc.date.accessioned2013-03-06T23:26:46Z-
dc.date.available2013-03-06T23:26:46Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-01-
dc.identifier.citationJOURNAL OF NON-CRYSTALLINE SOLIDS, v.351, pp.89 - 92-
dc.identifier.issn0022-3093-
dc.identifier.urihttp://hdl.handle.net/10203/88808-
dc.description.abstractWe select the boron as a dopant of wide bandgap nanocrystalline silicon-carbide (nc-SiC:H) film in order to achieve a high conductivity. Boron atoms introduced at the growing surface play important roles on the structural. electrical and optical characteristic,, of this material. It is found that they hinder the nucleation of nanocrystallites by elevating the deposition speed. Therefore. a relevant light doping is essential to improve the electrical conductivity without deteriorating, significantly the crystallinity and optical bandgap. (C) 2004 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectPHOTOCHEMICAL VAPOR-DEPOSITION-
dc.subjectMICROCRYSTALLINE SILICON-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectHYDROGEN-DILUTION-
dc.subjectGLOW-DISCHARGE-
dc.subjectCARBON SOURCE-
dc.subjectFILMS-
dc.subjectIMPROVEMENT-
dc.subjectETHYLENE-
dc.titleStrong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique-
dc.typeArticle-
dc.identifier.wosid000226273200013-
dc.identifier.scopusid2-s2.0-10644258057-
dc.type.rimsART-
dc.citation.volume351-
dc.citation.beginningpage89-
dc.citation.endingpage92-
dc.citation.publicationnameJOURNAL OF NON-CRYSTALLINE SOLIDS-
dc.contributor.localauthorLim, Koeng Su-
dc.contributor.nonIdAuthorMyong, SY-
dc.contributor.nonIdAuthorShevaleevskiy, O-
dc.contributor.nonIdAuthorMiyajima, S-
dc.contributor.nonIdAuthorKonagai, M-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPHOTOCHEMICAL VAPOR-DEPOSITION-
dc.subject.keywordPlusMICROCRYSTALLINE SILICON-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusHYDROGEN-DILUTION-
dc.subject.keywordPlusGLOW-DISCHARGE-
dc.subject.keywordPlusCARBON SOURCE-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusIMPROVEMENT-
dc.subject.keywordPlusETHYLENE-
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