DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwak, Joong-Hwan | ko |
dc.contributor.author | Kwon, Seong-Won | ko |
dc.contributor.author | Park, Sang-Il | ko |
dc.contributor.author | Yang, Ji-Hwan | ko |
dc.contributor.author | Lim, Koeng-Su | ko |
dc.date.accessioned | 2013-03-06T21:50:15Z | - |
dc.date.available | 2013-03-06T21:50:15Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-09 | - |
dc.identifier.citation | SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.92, pp.1081 - 1085 | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/88584 | - |
dc.description.abstract | A p-a-Si:H layer, deposited by a photo-assisted chemical vapor deposition (photo-CVD) method, was adopted as the window layer of a hydrogenated microcrystalline silicon (pc-Si:H) solar cell instead of the conventional p-pc-Si:H layer. We verified the usefulness of p-a-Si:H for the p-layer of the mu c-Si:H solar cell by applying it to SnO2-coated glass substrate. It was found that the quantum efficiency (QE) characteristics and solar cell performance strongly depend on the p-a-Si:H layer thicknesses. We applied boron-doped nanocrystalline silion (nc-Si:H) p/i buffer layers to mu c-Si:H solar cells and investigated the correlation of the p/i buffer layer B2H6 now rate and solar cell performance. When the B2H6 flow rate was 0.2 sccm, there was a little improvement in fill factor (FF), but the other parameters became poor as the B2H6; flow rate increased. This is because the conductivity of the buffer layer decreases as the B2H6 flow rate increases above appropriate values. A mu c-Si:H single-junction solar cell with ZnC/Ag back reflector with an efficiency of 7.76% has been prepared. (C) 2008 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | VAPOR-DEPOSITION | - |
dc.subject | FILMS | - |
dc.title | Microcrystalline silicon solar cell using p-a-Si : H window layer deposited by photo-CVD method | - |
dc.type | Article | - |
dc.identifier.wosid | 000258814200016 | - |
dc.identifier.scopusid | 2-s2.0-45049086010 | - |
dc.type.rims | ART | - |
dc.citation.volume | 92 | - |
dc.citation.beginningpage | 1081 | - |
dc.citation.endingpage | 1085 | - |
dc.citation.publicationname | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.identifier.doi | 10.1016/j.solmat.2008.03.019 | - |
dc.contributor.localauthor | Lim, Koeng-Su | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | photo-CVD | - |
dc.subject.keywordAuthor | p-a-Si : H | - |
dc.subject.keywordAuthor | solar cells | - |
dc.subject.keywordAuthor | hydrogenated microcrystalline silicon | - |
dc.subject.keywordAuthor | buffer layer | - |
dc.subject.keywordPlus | VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | FILMS | - |
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