Luminescence of Er-doped amorphous silicon quantum dots

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The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 mum was investigated. As the dot size was increased, the Er luminescence intensity was decreased and the temperature quenching was also fast because of the small band gap resulting in the decrease of electron-hole pair energy. Accordingly, the critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er. (C) 2004 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2005-03
Language
English
Article Type
Article; Proceedings Paper
Keywords

SI

Citation

THIN SOLID FILMS, v.475, pp.231 - 234

ISSN
0040-6090
URI
http://hdl.handle.net/10203/88508
Appears in Collection
NT-Journal Papers(저널논문)
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