Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap

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dc.contributor.authorJang, Weon-Wiko
dc.contributor.authorLee, Jeong-Oenko
dc.contributor.authorYoon, Jun-Boko
dc.contributor.authorKim, Min-Sangko
dc.contributor.authorLee, Ji-Myoungko
dc.contributor.authorKim, Sung-Minko
dc.contributor.authorCho, Keun-Hwiko
dc.contributor.authorKim, Dong-Wonko
dc.contributor.authorPark, Dong-Gunko
dc.contributor.authorLee, Won-Seongko
dc.date.accessioned2013-03-06T20:47:03Z-
dc.date.available2013-03-06T20:47:03Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-03-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.92, no.10-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/88410-
dc.description.abstractWe developed titanium nitride (TiN) based nanoelectromechanical (NEM) switch with the smallest suspension air-gap thickness ever made to date by a "top-down" complementary metal-oxide semiconductor fabrication methods. Cantilever-type NEM switch with a 15-nm-thick suspension air gap and a 35-nm-thick TiN beam was successfully fabricated and characterized. The fabricated cantilever-type NEM switch showed an essentially zero off current, an abrupt switching with less than 3 mV/decade, and an on/off current ratio exceeding 10(5) in air ambient. Also achieved was an endurance of over several hundreds of switching cycles under dc and ac biases in air ambient. (C) 2008 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectCARBON-
dc.subjectNANORELAY-
dc.subjectDEVICE-
dc.subjectLIMITS-
dc.subjectMEMORY-
dc.titleFabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap-
dc.typeArticle-
dc.identifier.wosid000253989300110-
dc.identifier.scopusid2-s2.0-40849092892-
dc.type.rimsART-
dc.citation.volume92-
dc.citation.issue10-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.2892659-
dc.contributor.localauthorYoon, Jun-Bo-
dc.contributor.nonIdAuthorJang, Weon-Wi-
dc.contributor.nonIdAuthorKim, Min-Sang-
dc.contributor.nonIdAuthorLee, Ji-Myoung-
dc.contributor.nonIdAuthorKim, Sung-Min-
dc.contributor.nonIdAuthorCho, Keun-Hwi-
dc.contributor.nonIdAuthorKim, Dong-Won-
dc.contributor.nonIdAuthorPark, Dong-Gun-
dc.contributor.nonIdAuthorLee, Won-Seong-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCARBON-
dc.subject.keywordPlusNANORELAY-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordPlusLIMITS-
dc.subject.keywordPlusMEMORY-
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