DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, WS | ko |
dc.contributor.author | Chan, DSH | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-03-06T19:39:22Z | - |
dc.date.available | 2013-03-06T19:39:22Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-09 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.9, pp.2469 - 2474 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/88188 | - |
dc.description.abstract | Various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs). It is found that TaC and HfC are more suitable for the CMOS device application among the various metal carbides. HfC is demonstrated to be a good candidate for NMOS because of its low WF and excellent thermal stability, while TaC + Al shows a high WF and good thermal stability suitable for PMOS device application. In addition, HfC and TaC have a wide range of WF tunability using thin LaN and AlN interlayer or introduction of La and Al into the metal carbides. | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.title | Metal carbides for band-edge work function metal gate CMOS devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000258914000024 | - |
dc.identifier.scopusid | 2-s2.0-50549097125 | - |
dc.type.rims | ART | - |
dc.citation.volume | 55 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 2469 | - |
dc.citation.endingpage | 2474 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2008.927946 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Hwang, WS | - |
dc.contributor.nonIdAuthor | Chan, DSH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CMOS devices | - |
dc.subject.keywordAuthor | equivalent oxide thickness (EOT) | - |
dc.subject.keywordAuthor | flatband voltage | - |
dc.subject.keywordAuthor | HfC | - |
dc.subject.keywordAuthor | high-kappa dielectric | - |
dc.subject.keywordAuthor | metal carbide | - |
dc.subject.keywordAuthor | metal gate | - |
dc.subject.keywordAuthor | MOS capacitor | - |
dc.subject.keywordAuthor | TaC | - |
dc.subject.keywordAuthor | work function (WF) | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.