Highly miniaturised InP/InGaAs PIN MMIC switches using BCB-based multilayer technology
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Jung-Gil | ko |
| dc.contributor.author | Choi, S. | ko |
| dc.contributor.author | Yang, Kyoung-Hoon | ko |
| dc.date.accessioned | 2013-03-06T19:25:04Z | - |
| dc.date.available | 2013-03-06T19:25:04Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2007-08 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.43, no.18, pp.981 - 983 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/88148 | - |
| dc.description.abstract | Fully integrated single-pole-double-throw and single-pole-triple-throw InP/InGaAs PIN switches have been designed and fabricated using a newly proposed BCB-based 3D MMIC technology. The chip sizes of the fabricated InP/InGaAs PIN switches, which show good and broadband RF characteristics, have been significantly reduced compared to those of conventional GaAs-based switches. The results indicate the potential of the proposed 31) MMIC technology for compact embedded MMIC applications. | - |
| dc.language | English | - |
| dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
| dc.title | Highly miniaturised InP/InGaAs PIN MMIC switches using BCB-based multilayer technology | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000249914600015 | - |
| dc.identifier.scopusid | 2-s2.0-34548299848 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 43 | - |
| dc.citation.issue | 18 | - |
| dc.citation.beginningpage | 981 | - |
| dc.citation.endingpage | 983 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.identifier.doi | 10.1049/el:20071624 | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Yang, Kyoung-Hoon | - |
| dc.contributor.nonIdAuthor | Choi, S. | - |
| dc.type.journalArticle | Article | - |
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