Spiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications

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dc.contributor.authorMai, Lko
dc.contributor.authorSong, HIko
dc.contributor.authorTuan, LMko
dc.contributor.authorVan Su, Pko
dc.contributor.authorYoon, Giwanko
dc.date.accessioned2013-03-06T18:11:08Z-
dc.date.available2013-03-06T18:11:08Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-07-
dc.identifier.citationMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.48, pp.1296 - 1298-
dc.identifier.issn0895-2477-
dc.identifier.urihttp://hdl.handle.net/10203/87902-
dc.description.abstractIn this paper for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated oil Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the characteristics of inductors art studied. The results show, that the inductor fabricated on the Bragg reflector result in a significant improvement in terms of the S-11-parameter. This approach seems highly feasible and promising for future Si-based RF IC applications. (c) 2006 Wiley Periodicals, Inc.-
dc.languageEnglish-
dc.publisherJOHN WILEY & SONS INC-
dc.titleSpiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications-
dc.typeArticle-
dc.identifier.wosid000237881300020-
dc.identifier.scopusid2-s2.0-33744811676-
dc.type.rimsART-
dc.citation.volume48-
dc.citation.beginningpage1296-
dc.citation.endingpage1298-
dc.citation.publicationnameMICROWAVE AND OPTICAL TECHNOLOGY LETTERS-
dc.identifier.doi10.1002/mop.21621-
dc.contributor.localauthorYoon, Giwan-
dc.contributor.nonIdAuthorMai, L-
dc.contributor.nonIdAuthorSong, HI-
dc.contributor.nonIdAuthorTuan, LM-
dc.contributor.nonIdAuthorVan Su, P-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorspiral inductor-
dc.subject.keywordAuthorinductor layout-
dc.subject.keywordAuthorBragg reflector-
dc.subject.keywordAuthorreturn loss (S-11)-
dc.subject.keywordAuthorsilicon substrate-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusRFICS-
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