Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

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A grazing incidence x-ray diffraction with a synchrotron radiation and a cross-sectional high-resolution transmission electron microscopy were performed on the sapphire surface nitrided at 1080 degrees C for 30 min. The thickness of the nitrided layer was about 2 nm. It was found out that the wurtzite, zinc-blende, and 30 degrees rotated zinc-blende aluminum nitrides were formed on the sapphire surface. The 30 degrees rotated zb-AlN formed the incoherent interface and has higher activation energy of formation, while the nonrotated zb-AlN formed the coherent interface. (c) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-11
Language
English
Article Type
Article
Keywords

RIETVELD-REFINEMENT; NITRIDATION; ALUMINUM; GAN; SILICON; SURFACE; GROWTH; FILMS

Citation

APPLIED PHYSICS LETTERS, v.91, pp.892 - 899

ISSN
0003-6951
DOI
10.1063/1.2815919
URI
http://hdl.handle.net/10203/87815
Appears in Collection
MS-Journal Papers(저널논문)
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