Photonic crystal effect on light emission from InGaN/GaN multi-quantum-well structures

Abstract

Triangular hole arrays with nanoscaled lattice constants of 230 and 460 nm were fabricated on a p-type GaN epitaxial layer grown on an InGaN/GaN multi-quantum-well light emitting diode structure by metal-organic chemical vapor deposition. The hole geometries of dry-etched thin slabs for triangular lattice constants of 230 and 460 nm possessed diameters of 223 and 218 nm at the surface, and 108 and 76 nm at the bottom, with depths of 31 and 27 nm, respectively. The hole array with a lattice constant of 230 nm enhances photoluminescence intensity at wavelengths of 364 and 406 nm, but reduces light extraction at a wavelength of 450 nm, which indicates destructive surface diffraction correlated with light scattering in the photonic crystal structure. (c) 2007 American Institute of Physics.