Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

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We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%-70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept constant with increasing pumping power, indicating negligible quantum confined Stark effect in ultrathin In-rich InGaN MQWs despite of high indium content. Optically pumped stimulated emission performed at room temperature was observed at 3.21 eV, the high-energy side of spontaneous emission, when the pumping power density exceeds similar to 31 kW/cm(2). (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3002300]
Publisher
AMER INST PHYSICS
Issue Date
2008-10
Language
English
Article Type
Article
Keywords

FUNDAMENTAL-BAND GAP; ENERGY

Citation

APPLIED PHYSICS LETTERS, v.93, no.16

ISSN
0003-6951
DOI
10.1063/1.3002300
URI
http://hdl.handle.net/10203/87061
Appears in Collection
PH-Journal Papers(저널논문)
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