DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, J. K. | ko |
dc.contributor.author | Sakong, T. | ko |
dc.contributor.author | Lee, S. N. | ko |
dc.contributor.author | Paek, H. S. | ko |
dc.contributor.author | Ryu, H. | ko |
dc.contributor.author | Ha, K. H. | ko |
dc.contributor.author | Nam, O. | ko |
dc.contributor.author | Park, Y. | ko |
dc.contributor.author | Hwang, J. S. | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.date.accessioned | 2013-03-06T12:52:39Z | - |
dc.date.available | 2013-03-06T12:52:39Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.90, no.5 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87026 | - |
dc.description.abstract | Time-lapsed emission peak shift behaviors in blue-light-emitting InGaN multiple quantum well (MQW) laser diodes with different well widths are systematically investigated by means of excitation power-dependent, time-resolved optical analysis. By investigating the main emission peak shift as a function of both time evolution and excitation power density, the amount of time-lapsed emission peak shift can be differentiated by two contributions: the excitation power dependent and independent ones. The authors conclude that the power-dependent (power-independent) time-lapsed peak shift can be attributed to the internal electric-field (carrier localization) effect present in vertical growth (lateral in-plane) direction of InGaN MQW laser diode structures. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | EXCITONS | - |
dc.title | Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect | - |
dc.type | Article | - |
dc.identifier.wosid | 000243977300038 | - |
dc.identifier.scopusid | 2-s2.0-33846972979 | - |
dc.type.rims | ART | - |
dc.citation.volume | 90 | - |
dc.citation.issue | 5 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2437680 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Son, J. K. | - |
dc.contributor.nonIdAuthor | Sakong, T. | - |
dc.contributor.nonIdAuthor | Lee, S. N. | - |
dc.contributor.nonIdAuthor | Paek, H. S. | - |
dc.contributor.nonIdAuthor | Ryu, H. | - |
dc.contributor.nonIdAuthor | Ha, K. H. | - |
dc.contributor.nonIdAuthor | Nam, O. | - |
dc.contributor.nonIdAuthor | Park, Y. | - |
dc.contributor.nonIdAuthor | Hwang, J. S. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | EXCITONS | - |
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