Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect

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dc.contributor.authorSon, J. K.ko
dc.contributor.authorSakong, T.ko
dc.contributor.authorLee, S. N.ko
dc.contributor.authorPaek, H. S.ko
dc.contributor.authorRyu, H.ko
dc.contributor.authorHa, K. H.ko
dc.contributor.authorNam, O.ko
dc.contributor.authorPark, Y.ko
dc.contributor.authorHwang, J. S.ko
dc.contributor.authorCho, Yong-Hoonko
dc.date.accessioned2013-03-06T12:52:39Z-
dc.date.available2013-03-06T12:52:39Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.90, no.5-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/87026-
dc.description.abstractTime-lapsed emission peak shift behaviors in blue-light-emitting InGaN multiple quantum well (MQW) laser diodes with different well widths are systematically investigated by means of excitation power-dependent, time-resolved optical analysis. By investigating the main emission peak shift as a function of both time evolution and excitation power density, the amount of time-lapsed emission peak shift can be differentiated by two contributions: the excitation power dependent and independent ones. The authors conclude that the power-dependent (power-independent) time-lapsed peak shift can be attributed to the internal electric-field (carrier localization) effect present in vertical growth (lateral in-plane) direction of InGaN MQW laser diode structures.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectEXCITONS-
dc.titleComprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect-
dc.typeArticle-
dc.identifier.wosid000243977300038-
dc.identifier.scopusid2-s2.0-33846972979-
dc.type.rimsART-
dc.citation.volume90-
dc.citation.issue5-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.2437680-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorSon, J. K.-
dc.contributor.nonIdAuthorSakong, T.-
dc.contributor.nonIdAuthorLee, S. N.-
dc.contributor.nonIdAuthorPaek, H. S.-
dc.contributor.nonIdAuthorRyu, H.-
dc.contributor.nonIdAuthorHa, K. H.-
dc.contributor.nonIdAuthorNam, O.-
dc.contributor.nonIdAuthorPark, Y.-
dc.contributor.nonIdAuthorHwang, J. S.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusEXCITONS-
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