P-type floating gate for retention and P/E window improvement of flash memory devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shen, Chen | ko |
| dc.contributor.author | Pu, Jing | ko |
| dc.contributor.author | Li, Ming-Fu | ko |
| dc.contributor.author | Cho, Byung Jin | ko |
| dc.date.accessioned | 2013-03-06T12:13:16Z | - |
| dc.date.available | 2013-03-06T12:13:16Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2007-08 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1910 - 1917 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/86952 | - |
| dc.description.abstract | A Flash memory with a lightly doped p-type floating gate is proposed, which improves charge retention and programming/erase (P/E) V-th window. Improvement in P/E window is enhanced for cells with smaller capacitance coupling ratio, which is important for future scaled Flash memory cells. Both device simulation and experimental verification are presented. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | EEPROMS | - |
| dc.title | P-type floating gate for retention and P/E window improvement of flash memory devices | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000248390600013 | - |
| dc.identifier.scopusid | 2-s2.0-34547883096 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 54 | - |
| dc.citation.issue | 8 | - |
| dc.citation.beginningpage | 1910 | - |
| dc.citation.endingpage | 1917 | - |
| dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.identifier.doi | 10.1109/TED.2007.900680 | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Shen, Chen | - |
| dc.contributor.nonIdAuthor | Pu, Jing | - |
| dc.contributor.nonIdAuthor | Li, Ming-Fu | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | coupling ratio (CR) | - |
| dc.subject.keywordAuthor | electrically erasable programmable read-only memory (EEPROM) | - |
| dc.subject.keywordAuthor | Flash memory | - |
| dc.subject.keywordAuthor | floating gate | - |
| dc.subject.keywordAuthor | p-type | - |
| dc.subject.keywordAuthor | retention | - |
| dc.subject.keywordPlus | EEPROMS | - |
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