A 2.4-GHz low-power low-IF receiver and direct-conversion transmitter in 0.18-mu m CMOS for IEEE 802.15.4 WPAN applications

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dc.contributor.authorNam, Iko
dc.contributor.authorChoi, Kko
dc.contributor.authorLee, Jko
dc.contributor.authorCha, HKko
dc.contributor.authorSeo, BIko
dc.contributor.authorKwon, Kko
dc.contributor.authorLee, Kwyroko
dc.date.accessioned2013-03-06T06:22:29Z-
dc.date.available2013-03-06T06:22:29Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-04-
dc.identifier.citationIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.55, pp.682 - 689-
dc.identifier.issn0018-9480-
dc.identifier.urihttp://hdl.handle.net/10203/86116-
dc.description.abstractIn this paper, a low-power low-IF receiver and a direct-conversion transmitter (DCT) suitable for the IEEE standard 802.15.4 radio system at the 2.4-GHz band are presented in 0.18-mu m deep n-well CMOS technology. By using vertical NPN (V-NPN) bipolar junction transistors in the baseband analog circuits of the low-IF receiver, the image rejection performance is improved and the power consumption is reduced. In addition, by applying the V-NPN current mirrored technique in a DCT, the carrier leakage is reduced and the linearity performance is improved. The receiver has 10 dB of noise figure, - 15 dBm of third-order input intercept point, and 35 dBc of image rejection. The transmitter has more than -2 dBm of transmit output power, -35 dBc of local oscillator leakage, and -46 dBc of the transmit third harmonic component. The receiver and transmitter dissipate 6 and 9 mA from a 1.8-V supply, respectively.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectIEEE 802.15.4-
dc.subjectFRONT-END-
dc.subjectAMPLIFIER-
dc.subjectCIRCUITS-
dc.subjectDESIGN-
dc.titleA 2.4-GHz low-power low-IF receiver and direct-conversion transmitter in 0.18-mu m CMOS for IEEE 802.15.4 WPAN applications-
dc.typeArticle-
dc.identifier.wosid000245768700011-
dc.identifier.scopusid2-s2.0-34147176053-
dc.type.rimsART-
dc.citation.volume55-
dc.citation.beginningpage682-
dc.citation.endingpage689-
dc.citation.publicationnameIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES-
dc.identifier.doi10.1109/TMTT.2007.893646-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorNam, I-
dc.contributor.nonIdAuthorChoi, K-
dc.contributor.nonIdAuthorLee, J-
dc.contributor.nonIdAuthorCha, HK-
dc.contributor.nonIdAuthorSeo, BI-
dc.contributor.nonIdAuthorKwon, K-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthorlow power-
dc.subject.keywordAuthorlow rate-
dc.subject.keywordAuthorreceiver-
dc.subject.keywordAuthorRF-
dc.subject.keywordAuthortransmitter-
dc.subject.keywordAuthor2.4 GHz-
dc.subject.keywordAuthorvertical NPN (V-NPN)-
dc.subject.keywordAuthorwireless personal area network (WPAN)-
dc.subject.keywordPlusIEEE 802.15.4-
dc.subject.keywordPlusFRONT-END-
dc.subject.keywordPlusAMPLIFIER-
dc.subject.keywordPlusCIRCUITS-
dc.subject.keywordPlusDESIGN-
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