Chemical modification of gate dielectric surfaces in organic thin film transistor (OTFT) through molecular self-assembly

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To modify SiO2 dielectric surface of bottom-contact OTFT device, octadecyltriethoxysilane (OTES) was used to find optimum condition of surface modification for triethoxysilane derivatives. Either spin-coating method or solution dipping method was applied to modify the dielectric surface with OTES. Optimization process was performed with varying solution concentration, reaction time and so on. Through surface modification of OTFT 0.01-0.04 cm(2)/V/s of hole mobilities were observed depending on modification conditions.
Publisher
TAYLOR FRANCIS LTD
Issue Date
2003
Language
English
Article Type
Article; Proceedings Paper
Citation

MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.405, pp.179 - 186

ISSN
1058-725X
URI
http://hdl.handle.net/10203/86012
Appears in Collection
CH-Journal Papers(저널논문)
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