DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Son, CW | ko |
dc.contributor.author | Kim, JY | ko |
dc.contributor.author | Kim, BM | ko |
dc.contributor.author | Lee, WS | ko |
dc.contributor.author | Lee, SN | ko |
dc.contributor.author | Son, JK | ko |
dc.contributor.author | Nam, H | ko |
dc.contributor.author | Park, YJ | ko |
dc.date.accessioned | 2013-03-06T05:00:25Z | - |
dc.date.available | 2013-03-06T05:00:25Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-04 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.44, pp.L792 - L795 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85880 | - |
dc.description.abstract | The influence of thermal degradation and the interruption time on the optical characteristics of InGaN multi-quantum-well (MQW) structures was examined. A series of 5-period In0.08Ga0.92N/In0.02Ga0.98N MQW samples with different final temperatures before cooling-down and with different interruption times during QW growth were grown on sapphire substrates by using metalorganic chemical vapor deposition. We carried out temperature-dependant photoluminescence (PL) and PL excitation measurements to elucidate the quantum efficiency and the origin of the emission, respectively. From a comparison of PL spectra and luminescence efficiency, we conclude that (1) high temperature ramping-up and exposure steps degrade the optical properties of QWs by thermal damage, (2) the InGaN QWs can be protected from thermal damage by a GaN capping layer, and (3) the interruption time during the QW growth somewhat degrades the optical properties of QWs. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | RECOMBINATION DYNAMICS | - |
dc.subject | LOCALIZED EXCITONS | - |
dc.subject | WELLS | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | EMISSION | - |
dc.subject | DOTS | - |
dc.title | Influence of thermal damage and the interruption time on the optical properties of InGaN quantum wall structures | - |
dc.type | Article | - |
dc.identifier.wosid | 000220875900004 | - |
dc.identifier.scopusid | 2-s2.0-2442514052 | - |
dc.type.rims | ART | - |
dc.citation.volume | 44 | - |
dc.citation.beginningpage | L792 | - |
dc.citation.endingpage | L795 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Son, CW | - |
dc.contributor.nonIdAuthor | Kim, JY | - |
dc.contributor.nonIdAuthor | Kim, BM | - |
dc.contributor.nonIdAuthor | Lee, WS | - |
dc.contributor.nonIdAuthor | Lee, SN | - |
dc.contributor.nonIdAuthor | Son, JK | - |
dc.contributor.nonIdAuthor | Nam, H | - |
dc.contributor.nonIdAuthor | Park, YJ | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Letter | - |
dc.subject.keywordAuthor | InGaN quantum well | - |
dc.subject.keywordAuthor | thermal damage | - |
dc.subject.keywordAuthor | interruption time | - |
dc.subject.keywordAuthor | optical properties | - |
dc.subject.keywordPlus | RECOMBINATION DYNAMICS | - |
dc.subject.keywordPlus | LOCALIZED EXCITONS | - |
dc.subject.keywordPlus | WELLS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | DOTS | - |
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