Influence of thermal damage and the interruption time on the optical properties of InGaN quantum wall structures

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dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorSon, CWko
dc.contributor.authorKim, JYko
dc.contributor.authorKim, BMko
dc.contributor.authorLee, WSko
dc.contributor.authorLee, SNko
dc.contributor.authorSon, JKko
dc.contributor.authorNam, Hko
dc.contributor.authorPark, YJko
dc.date.accessioned2013-03-06T05:00:25Z-
dc.date.available2013-03-06T05:00:25Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-04-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.44, pp.L792 - L795-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/85880-
dc.description.abstractThe influence of thermal degradation and the interruption time on the optical characteristics of InGaN multi-quantum-well (MQW) structures was examined. A series of 5-period In0.08Ga0.92N/In0.02Ga0.98N MQW samples with different final temperatures before cooling-down and with different interruption times during QW growth were grown on sapphire substrates by using metalorganic chemical vapor deposition. We carried out temperature-dependant photoluminescence (PL) and PL excitation measurements to elucidate the quantum efficiency and the origin of the emission, respectively. From a comparison of PL spectra and luminescence efficiency, we conclude that (1) high temperature ramping-up and exposure steps degrade the optical properties of QWs by thermal damage, (2) the InGaN QWs can be protected from thermal damage by a GaN capping layer, and (3) the interruption time during the QW growth somewhat degrades the optical properties of QWs.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectRECOMBINATION DYNAMICS-
dc.subjectLOCALIZED EXCITONS-
dc.subjectWELLS-
dc.subjectPHOTOLUMINESCENCE-
dc.subjectEMISSION-
dc.subjectDOTS-
dc.titleInfluence of thermal damage and the interruption time on the optical properties of InGaN quantum wall structures-
dc.typeArticle-
dc.identifier.wosid000220875900004-
dc.identifier.scopusid2-s2.0-2442514052-
dc.type.rimsART-
dc.citation.volume44-
dc.citation.beginningpageL792-
dc.citation.endingpageL795-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorSon, CW-
dc.contributor.nonIdAuthorKim, JY-
dc.contributor.nonIdAuthorKim, BM-
dc.contributor.nonIdAuthorLee, WS-
dc.contributor.nonIdAuthorLee, SN-
dc.contributor.nonIdAuthorSon, JK-
dc.contributor.nonIdAuthorNam, H-
dc.contributor.nonIdAuthorPark, YJ-
dc.description.isOpenAccessN-
dc.type.journalArticleLetter-
dc.subject.keywordAuthorInGaN quantum well-
dc.subject.keywordAuthorthermal damage-
dc.subject.keywordAuthorinterruption time-
dc.subject.keywordAuthoroptical properties-
dc.subject.keywordPlusRECOMBINATION DYNAMICS-
dc.subject.keywordPlusLOCALIZED EXCITONS-
dc.subject.keywordPlusWELLS-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusEMISSION-
dc.subject.keywordPlusDOTS-
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