DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Lee, DU | ko |
dc.contributor.author | Choo, DC | ko |
dc.contributor.author | Jung, M | ko |
dc.contributor.author | Kim, MD | ko |
dc.date.accessioned | 2013-03-06T04:26:28Z | - |
dc.date.available | 2013-03-06T04:26:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-04 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.91, no.8, pp.5195 - 5199 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85793 | - |
dc.description.abstract | The microstructural and the optical properties of InAs/GaAs quantum-dot (QD) arrays inserted into undoped GaAs barriers embedded in an AlxGa1-xAs/GaAs were investigated by using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images and the selected-area electron diffraction patterns showed that vertically stacked InAs QD self-assembled arrays were embedded in the GaAs barriers. The temperature-dependent PL spectra showed that the peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band of the InAs QDs shifted to lower energy with increasing temperature. The PL intensity of the InAs dots was significantly enhanced by the modulation-doped AlxGa1-xAs/GaAs heterostructure, and the thermal activation energy of the InAs dots was decreased by the addition of the modulation-doped AlxGa1-xAs/GaAs heterostructure. The present results can help to improve the understanding of the microstructural and the optical properties in InAs QD arrays inserted into GaAs barriers embedded in a modulation-doped AlxGa1-xAs/GaAs heterostructure. (C) 2002 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MOLECULAR-BEAM-EPITAXY | - |
dc.subject | INAS ISLANDS | - |
dc.subject | GAAS | - |
dc.subject | INP(001) | - |
dc.subject | GROWTH | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | RELAXATION | - |
dc.subject | STRAIN | - |
dc.subject | INGAAS | - |
dc.subject | MATRIX | - |
dc.title | Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1-xAs/GaAs heterostructures | - |
dc.type | Article | - |
dc.identifier.wosid | 000174666600064 | - |
dc.identifier.scopusid | 2-s2.0-0037091710 | - |
dc.type.rims | ART | - |
dc.citation.volume | 91 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 5195 | - |
dc.citation.endingpage | 5199 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Lee, DU | - |
dc.contributor.nonIdAuthor | Choo, DC | - |
dc.contributor.nonIdAuthor | Jung, M | - |
dc.contributor.nonIdAuthor | Kim, MD | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM-EPITAXY | - |
dc.subject.keywordPlus | INAS ISLANDS | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | INP(001) | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | RELAXATION | - |
dc.subject.keywordPlus | STRAIN | - |
dc.subject.keywordPlus | INGAAS | - |
dc.subject.keywordPlus | MATRIX | - |
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