DC Field | Value | Language |
---|---|---|
dc.contributor.author | Agnihotri, OP | ko |
dc.contributor.author | Pal, R | ko |
dc.contributor.author | Yang, KD | ko |
dc.contributor.author | Bae, SH | ko |
dc.contributor.author | Lee, SJ | ko |
dc.contributor.author | Lee, MY | ko |
dc.contributor.author | Choi, WS | ko |
dc.contributor.author | Choi, JH | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.contributor.author | Kato, I | ko |
dc.date.accessioned | 2013-03-05T04:25:35Z | - |
dc.date.available | 2013-03-05T04:25:35Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-07 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.7A, pp.4500 - 4502 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85481 | - |
dc.description.abstract | Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation. | - |
dc.language | English | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.subject | PLASMA HYDROGENATION | - |
dc.subject | HGCDTE | - |
dc.subject | DETECTORS | - |
dc.subject | PASSIVATION | - |
dc.subject | TECHNOLOGY | - |
dc.title | Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment | - |
dc.type | Article | - |
dc.identifier.wosid | 000177512200016 | - |
dc.identifier.scopusid | 2-s2.0-0036656342 | - |
dc.type.rims | ART | - |
dc.citation.volume | 41 | - |
dc.citation.issue | 7A | - |
dc.citation.beginningpage | 4500 | - |
dc.citation.endingpage | 4502 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Agnihotri, OP | - |
dc.contributor.nonIdAuthor | Pal, R | - |
dc.contributor.nonIdAuthor | Yang, KD | - |
dc.contributor.nonIdAuthor | Bae, SH | - |
dc.contributor.nonIdAuthor | Lee, SJ | - |
dc.contributor.nonIdAuthor | Lee, MY | - |
dc.contributor.nonIdAuthor | Choi, WS | - |
dc.contributor.nonIdAuthor | Choi, JH | - |
dc.contributor.nonIdAuthor | Kato, I | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | n-Hg0.8Cd0.2Te | - |
dc.subject.keywordAuthor | CdTe/n-Hg0.8Cd0.2Te | - |
dc.subject.keywordAuthor | surface and interface modifications | - |
dc.subject.keywordPlus | PLASMA HYDROGENATION | - |
dc.subject.keywordPlus | HGCDTE | - |
dc.subject.keywordPlus | DETECTORS | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
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