DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | King, TJ | ko |
dc.contributor.author | Hu, CM | ko |
dc.date.accessioned | 2013-03-05T03:10:07Z | - |
dc.date.available | 2013-03-05T03:10:07Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-10 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.46, no.10, pp.1595 - 1601 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85215 | - |
dc.description.abstract | A spacer lithography technology using a sacrificial layer and a chemical vapor deposition (CVD) spacer layer has been developed, and is demonstrated to achieve sub-40 nm structures with conventional dry etching. The minimum-sized features are finished not by photolithography but by the CVD film thickness. Therefore the spacer lithography technology yields critical dimension variations of minimum-sized features which are much smaller than achieved by optical or e-beam lithography. It also provides a doubling of device density for a given lithography pitch. This spacer lithography technology is used to pattern silicon-fin structures for double-gate MOSFETs and CMOS FinFET results are reported. (C) 2002 Elsevier Science Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | MOSFET | - |
dc.subject | NM | - |
dc.subject | LITHOGRAPHY | - |
dc.title | Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era | - |
dc.type | Article | - |
dc.identifier.wosid | 000177687300020 | - |
dc.identifier.scopusid | 2-s2.0-0036779146 | - |
dc.type.rims | ART | - |
dc.citation.volume | 46 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 1595 | - |
dc.citation.endingpage | 1601 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.identifier.doi | 10.1016/S0038-1101(02)00111-9 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | King, TJ | - |
dc.contributor.nonIdAuthor | Hu, CM | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | MOSFET | - |
dc.subject.keywordPlus | NM | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
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