The study of a single-electron memory cell using coupled multiple tunnel-junction arrays

Abstract

We have theoretically studied the operation principle of a memory cell using the parallel coupled arrays. This makes use of the unique property of the coupled arrays that is the Coulomb blockade by electron-hole pairs, rather than the Coulomb blockade by electrons in other single-electron memory cells. The main feature, that the binding strength of the electron-hole pairs increases with the coupling strength between the two arrays, can lead to the enhanced stability of stored charges in the memory device.