Non-integer values of conductance quantization in a triple-gate quantum wires

Abstract

We study electronic transport within the context of a triple-gate device with a width of 120 nm fabricated in a high mobility quantum wire. Quasi-one-dimensional conducting wire structures are made by a combination of electron beam lithography and shallow mesa etching. The low temperature conductance was found to be quantized at the non-integer values of e(2)/h with respect to the gate voltage at a fixed magnetic field of 3 T. We interpreted it by the transmittance as the mode matching between the gated and ungated regions of wire.