Formation mechanism of hydrogen-induced (111) platelets in silicon

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We suggest a structural model for the formation of hydrogen-induced (1 1 1) platelets in Si. We calculate the formation energies of various platelet structures using the first-principles pseudopotential method within the local-density-functional approximation. The formation mechanism involves a structural transformation from a double-layer-H-2(*), structure into an H-saturated Si(1 1 1) internal surface structure with H-2 molecules generated in the platelet void. We also examine the energetics of the H-saturated Si(1 1 1) internal surface structures with various densities of H-2 molecules, and find an abrupt increase of the internal pressure built up in the void. (C) 2001 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2001-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

SINGLE-CRYSTAL SILICON; COMPLEXES; DEFECTS

Citation

PHYSICA B-CONDENSED MATTER, v.308, pp.143 - 146

ISSN
0921-4526
URI
http://hdl.handle.net/10203/84376
Appears in Collection
PH-Journal Papers(저널논문)
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