Temperature dependence of transmission and emission spectra in MOCVD-grown AlGaN ternary alloys

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Optical absorption, emission, and carrier recombination characteristics of Al(x)Ga(1-x)N epilayers (x = 0.17, 0.26, and 0.33) were systematically studied by means of transmission, photo luminescence (PL), and time-resolved PL spectroscopy, respectively, A typical energy-gap shrinkage behaviour with temperature was confirmed for all the Al(x)Ga(1-x)N epilayers by transmission measurements. However, we observed anomalous PL temperature dependences such as a decrease-increase-decrease behavior of the PL peak energy shift and an increase-decrease-increase behavior of the spectral width broadening with increasing temperature. The anomalous temperature-induced emission shift is attributed to energy tail states due to alloy potential inhomogeneities in the Al(x)Ga(1-x)N epilayers with large Al content.
Publisher
WILEY-BLACKWELL
Issue Date
2001-11
Language
English
Article Type
Article; Proceedings Paper
Keywords

SUPERLATTICES; STATES

Citation

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.188, no.2, pp.815 - 819

ISSN
1862-6300
DOI
10.1002/1521-396X(200112)188:2<815::AID-PSSA815>3.0.CO;2-B
URI
http://hdl.handle.net/10203/84350
Appears in Collection
PH-Journal Papers(저널논문)
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