Laterally driven electrostatic repulsive-force microactuators using asymmetric field distribution

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We present a new electrostatic actuation method using a lateral repulsive-force induced by an asymmetric distribution of planar electrostatic field. The lateral repulsive-force has been characterized by a simple analytical equation, derived from a finite element simulation. Quality-factors are estimated from the computer simulation based on creep flow model. A set of repulsive-force polycrystalline silicon microactuators has been designed and fabricated by a four-mask surface-micromachining process. Static and dynamic response of the fabricated microactuators has been measured at the atmospheric pressure for the driving voltage range of 0-140 V. The static displacement of 1.27 Irm is obtained at the de voltage of 140 V. The resonant frequency of the repulsive-force microactuator increases from 11.7 kHz to 12.7 kHz when the de induction voltage increases from 60 V to 140 V. The measured quality-factors are increased from 12 to 13 in the voltage range of 60-140 V. Fundamental characteristics of the force, frequency and quality-factor of the electrostatic repulsive-force microactuator have been discussed and compared with those of the conventional electrostatic attractive-force microactuator.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2001-03
Language
English
Article Type
Article
Keywords

MICROSTRUCTURES

Citation

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, v.10, no.1, pp.128 - 136

ISSN
1057-7157
URI
http://hdl.handle.net/10203/84346
Appears in Collection
BiS-Journal Papers(저널논문)
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