DC Field | Value | Language |
---|---|---|
dc.contributor.author | 한기호 | ko |
dc.contributor.author | 조영호 | ko |
dc.date.accessioned | 2013-03-04T22:07:51Z | - |
dc.date.available | 2013-03-04T22:07:51Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-07 | - |
dc.identifier.citation | 전기학회논문지, v.50, no.7, pp.346 - 350 | - |
dc.identifier.issn | 1975-8359 | - |
dc.identifier.uri | http://hdl.handle.net/10203/84345 | - |
dc.description.abstract | We present a surface-micromachined polysilicon capacitive accelerometer using unevenly distributed comb electrodes. The unique features of the accelerometer include a perforated proof-mass and the inner and outer comb electrodes with uneven electrode gaps. The perforated proof-mass reduces stiction between the structure and the substrate and the unevenly distributed electrodes shorten the electrode length required for a given sensitivity. The polysilicon accelerometer has been fabricated by the conventional 6-mask surface-micromachining process and showes a sensitivity of 1.03mV/g with a hybrid detection circuitry. | - |
dc.language | Korean | - |
dc.publisher | 대한전기학회 | - |
dc.title | 비등간격 수평감지 전극구조의 정전용량형 다결정 실리콘 가속도계 | - |
dc.title.alternative | A Polysilicon Capacitive Microaccelerometer with Unevenly Distributed Comb Electrodes | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 50 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 346 | - |
dc.citation.endingpage | 350 | - |
dc.citation.publicationname | 전기학회논문지 | - |
dc.contributor.localauthor | 조영호 | - |
dc.contributor.nonIdAuthor | 한기호 | - |
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