An optical microswitch chip integrated with silicon waveguides and touch-down electrostatic micromirrors

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We present an silicon-on-insulator (SOI) optical microswitch, composed of silicon waveguides and electrostatically actuated gold-coated silicon micromirrors integrated with laser diode (LD) receivers and photo diode (PD) transmitters. For a low switching voltage, we modify the conventional curved electrode microactuator into a new microactuator with touch-down beams. We fabricate the waveguides and the actuated micromirror using the inductively coupled plasma (ICP) etching process of SOI wafers. The fabricated microswitch operates at the switching voltage of 31.7 +/- 4 V with the resonant frequency of 6.89 kHz. Compared to the conventional microactuator, the touch-down beam microactuator achieves 77.4% reduction of the switching voltage. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of 4.18 +/- 0.25 dB. We discuss a feasible method to achieve the switching voltage lower than 10 V by reducing the residual stress in the insulation layers of touch-down beams to the level of 30 MPa. We also analyze the major source of micromirror loss, thereby presenting design guidelines for low-loss micromirror switches.
Publisher
IOP PUBLISHING LTD
Issue Date
2004-12
Language
English
Article Type
Article
Keywords

SWITCH; ELECTRODE

Citation

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, v.14, pp.1674 - 1681

ISSN
0960-1317
URI
http://hdl.handle.net/10203/84282
Appears in Collection
BiS-Journal Papers(저널논문)
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